Advances in Thin-Film Materials and Their Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: 20 March 2026 | Viewed by 1361

Special Issue Editors


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Guest Editor
Department of Physics, Faculty of Sciences and Techniques of Tangier, Abdelmalek Essaadi University, Tangier BP 416, Morocco
Interests: thin-film materials; advanced characterization techniques; electrochemical device applications; optoelectronics; simulations

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Guest Editor
Department of Physics, Faculty of Sciences and Techniques of Tangier, Abdelmalek Essaadi University, Tangier BP 416, Morocco
Interests: crystallization; material characterization; thin films; structural optical and electrochemical properties

Special Issue Information

Dear Colleagues,

Thin-film materials have become increasingly significant in modern science and technology, demonstrating unique structural, chemical, electrical, optical, and mechanical properties compared to their bulky counterparts. They play vital roles in a wide range of fields, including electronics, photonics, energy conversion and storage, sensor technology, surface engineering, and biomedicine. For instance, in electronics, thin films are essential for creating high-performance integrated circuits and flexible electronic devices. In energy applications, they are crucial for enhancing the efficiency of solar cells and batteries. In sensor technology, thin films enable the development of highly sensitive and selective sensors. Furthermore, thin films have shown great potential in emerging areas such as optoelectronics, flexible electronics, and biomedicine.

Potential topics for this Special Issue include, but are not limited to, the following:

  • Thin film synthesis and growth: Research on advanced techniques, such as chemical vapor deposition, physical vapor deposition, atomic layer deposition, and sol–gel methods.
  • Thin film characterization: Studies on the structural, optical, electrical, magnetic, and mechanical properties of thin films, including high-resolution diffraction techniques and other advanced characterization methods.
  • Thin film applications: Explorations of thin-film materials in electronics, photonics, energy conversion and storage, sensor technology, surface engineering, and biomedicine.
  • Thin film interfacial phenomena: Investigations into the interfacial effects, defects, and stability in thin films.
  • Thin film modeling and simulation: Theoretical and computational modeling of thin film growth, properties, and applications.

Dr. Abdellatif El-Habib
Dr. Abdessamad Aouni
Guest Editors

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Keywords

  • thin-film materials
  • coatings
  • synthesis and growth
  • interfacial phenomena

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Published Papers (2 papers)

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Research

17 pages, 5692 KB  
Article
Investigating the Influence of Cerium Doping on the Structural, Optical, and Electrical Properties of ZnCexCo2xO4 Zinc Cobaltite Thin Films
by Abdellatif El-Habib, Mohamed Oubakalla, Samir Haloui, Youssef Nejmi, Mohamed El Bouji, Amal Yousfi, Fouad El Mansouri, Abdessamad Aouni, Mustapha Diani and Mohammed Addou
Crystals 2025, 15(8), 742; https://doi.org/10.3390/cryst15080742 - 20 Aug 2025
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Abstract
Cerium-doped zinc cobaltite spinel thin films, ZnCexCo2xO4 (0.00x0.05), were synthesized via spray pyrolysis, and their structural, morphological, optical, and electrical properties were analyzed. X-ray [...] Read more.
Cerium-doped zinc cobaltite spinel thin films, ZnCexCo2xO4 (0.00x0.05), were synthesized via spray pyrolysis, and their structural, morphological, optical, and electrical properties were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with a predominant (311) orientation across all compositions. Raman spectroscopy further verified this phase, revealing four active vibrational modes at 180 cm−1, 470 cm−1, 515 cm−1, and 682 cm−1. Scanning electron microscopy (SEM) indicated a uniform grain distribution, while energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Ce, Zn, Co, and O. Optical measurements revealed two distinct bandgaps, decreasing from 2.32 eV to 2.20 eV for the lower-energy transition and from 3.38 eV to 3.18 eV for the higher-energy transition. Hall effect measurements confirmed p-type conductivity in all films. Electrical analysis showed a reduction in resistivity, from 280.3 Ω·cm to 15.4 Ω·cm, along with an increase in carrier concentration from 1.15 × 1016 cm−3 to 8.15 × 1017 cm−3 with higher Ce content. These results demonstrate that spray pyrolysis is a cost-effective and scalable method for producing Ce-doped ZnCo2O4 thin films with tunable properties, making them suitable for electronic and optoelectronic applications. Full article
(This article belongs to the Special Issue Advances in Thin-Film Materials and Their Applications)
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11 pages, 3461 KB  
Article
Magnetotransport Measurements in Overdoped Mn:Bi2Te3 Thin Films
by Angadjit Singh, Varun S. Kamboj, Crispin H. W. Barnes and Thorsten Hesjedal
Crystals 2025, 15(6), 557; https://doi.org/10.3390/cryst15060557 - 11 Jun 2025
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Abstract
Introducing magnetic dopants into topological insulators (TIs) provides a pathway to realizing novel quantum phenomena, including the quantum anomalous Hall effect (QAHE) and axionic states. One of the most commonly used 3d transition metal dopants is Mn, despite its known tendency to [...] Read more.
Introducing magnetic dopants into topological insulators (TIs) provides a pathway to realizing novel quantum phenomena, including the quantum anomalous Hall effect (QAHE) and axionic states. One of the most commonly used 3d transition metal dopants is Mn, despite its known tendency to be highly mobile and to cause phase segregation. In this study, we present a detailed magnetotransport investigation of Mn-overdoped Bi2Te3 thin films using field-effect transistor architectures. Building on our previous structural investigations of these samples, we examine how high Mn content influences their electronic transport properties. From our earlier studies, we know that high Mn doping concentrations lead to the formation of secondary phases, which significantly alter weak antilocalization behavior and suppress topological surface transport. To probe the gate response of these doped films over extended areas, we fabricate field-effect transistor structures, and we observe uniform electrostatic control of conduction across the magnetic phase. Inspired by recent developments in intrinsic topological systems such as the MnTe-Bi2Te3 septuple-layer compounds, we explore the influence of embedded ferromagnetic chalcogenide inclusions as an alternative route to engineer magnetic topological states and potentially expand the operational temperature range of QAHE-enabled devices. Full article
(This article belongs to the Special Issue Advances in Thin-Film Materials and Their Applications)
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