Special Issue "Synthesis and Modification of Nanostructured Thin Films"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 25 March 2019

Special Issue Editor

Guest Editor
Prof. Dr. Ion N. Mihailescu

National Institute for Laser, Plasma and Radiation Physics, Plasma and Radiation Physics, Magurele, Ilfov, Romania
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Special Issue Information

Dear Colleagues,

We invite you to contribute to a Special Issue of Nanomaterials entitled "Synthesis and Modification of Nanostructured Thin Films", which is devoted to nanostructures for applications in science, technology, and biomedicine. We expect new original results and interpretations in the synthesis of nanostructures with a special emphasis on complex characterizations and multifunctional utilizations.

This Special Issue is open to any kind of synthesis process and also includes multiple congruent characterization, complex interpretations of results, and recent applications in multiple fields.

The conviction of the Guest Editor is that many advances should be marked in the field and they deserve an up-to-date review. The authors should refer to previous progress in the field and try to focus on the latest developments within this domain.

We believe that the time has come for such an evaluation. The topics of this issue are quite generous starting from synthesis via characterization and going to last hour applications of nanomaterials.

Prof. Dr. Ion N. Mihailescu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Synthesis of nanostructures
  • Methods of synthesis
  • Characterization of thin films and nanoparticles
  • Key technological applications

Published Papers (3 papers)

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Research

Open AccessArticle An Eight-Channel C-Band Demux Based on Multicore Photonic Crystal Fiber
Nanomaterials 2018, 8(10), 845; https://doi.org/10.3390/nano8100845
Received: 29 August 2018 / Revised: 12 October 2018 / Accepted: 15 October 2018 / Published: 17 October 2018
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Abstract
A novel eight-channel demux device based on multicore photonic crystal fiber (PCF) structures that operate in the C-band range (1530–1565 nm) has been demonstrated. The PCF demux design is based on replacing some air-hole areas with lithium niobate and silicon nitride materials over
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A novel eight-channel demux device based on multicore photonic crystal fiber (PCF) structures that operate in the C-band range (1530–1565 nm) has been demonstrated. The PCF demux design is based on replacing some air-hole areas with lithium niobate and silicon nitride materials over the PCF axis alongside with the appropriate optimizations of the PCF structure. The beam propagation method (BPM) combined with Matlab codes was used to model the demux device and optimize the geometrical parameters of the PCF structure. The simulation results showed that the eight-channel demux can be demultiplexing after light propagation of 5 cm with a large bandwidth (4.03–4.69 nm) and cross-talk (−16.88 to −15.93 dB). Thus, the proposed device has great potential to be integrated into dense wavelength division multiplexing (DWDM) technology for increasing performances in networking systems. Full article
(This article belongs to the Special Issue Synthesis and Modification of Nanostructured Thin Films)
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Open AccessArticle Aqueous Synthesis, Degradation, and Encapsulation of Copper Nanowires for Transparent Electrodes
Nanomaterials 2018, 8(10), 767; https://doi.org/10.3390/nano8100767
Received: 17 August 2018 / Revised: 12 September 2018 / Accepted: 25 September 2018 / Published: 28 September 2018
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Abstract
Copper nanowires (CuNWs) have increasingly become subjected to academic and industrial research, which is attributed to their good performance as a transparent electrode (TE) material that competes with the one of indium tin oxide (ITO). Recently, an environmentally friendly and aqueous synthesis of
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Copper nanowires (CuNWs) have increasingly become subjected to academic and industrial research, which is attributed to their good performance as a transparent electrode (TE) material that competes with the one of indium tin oxide (ITO). Recently, an environmentally friendly and aqueous synthesis of CuNWs was demonstrated, without the use of hydrazine that is known for its unfavorable properties. In this work, we extend the current knowledge for the aqueous synthesis of CuNWs by studying their up-scaling potential. This potential is an important aspect for the commercialization and further development of CuNW-based devices. Due to the scalability and homogeneity of the deposition process, spray coating was selected to produce films with a low sheet resistance of 7.6 Ω/sq. and an optical transmittance of 77%, at a wavelength of 550 nm. Further, we present a comprehensive investigation of the degradation of CuNWs when subjected to different environmental stresses such as the exposure to ambient air, elevated temperatures, high electrical currents, moisture or ultraviolet (UV) light. For the oxidation process, a model is derived to describe the dependence of the breakdown time with the temperature and the initial resistance. Finally, polymer coatings made of polydimethylsiloxane (PDMS) and polymethylmethacrylate (PMMA), as well as oxide coatings composed of electron beam evaporated silicon dioxide (SiO2) and aluminum oxide (Al2O3) are tested to hinder the oxidation of the CuNW films under current flow. Full article
(This article belongs to the Special Issue Synthesis and Modification of Nanostructured Thin Films)
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Graphical abstract

Open AccessArticle Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
Nanomaterials 2018, 8(9), 704; https://doi.org/10.3390/nano8090704
Received: 22 July 2018 / Revised: 29 August 2018 / Accepted: 8 September 2018 / Published: 10 September 2018
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Abstract
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS
[...] Read more.
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the AlGaN film could be improved when grown on the AlN/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 × 109 cm−2 for the AlGaN epilayer grown on the AlN/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 × 109 cm−2). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on AlN/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface. Full article
(This article belongs to the Special Issue Synthesis and Modification of Nanostructured Thin Films)
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