Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Structural Properties
3.2. Optical Properties
3.3. Electrophysical Properties
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Kolchin, A.; Shuleiko, D.; Martyshov, M.; Efimova, A.; Golovan, L.; Presnov, D.; Kunkel, T.; Glukhenkaya, V.; Lazarenko, P.; Kashkarov, P.; et al. Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation. Materials 2022, 15, 3499. https://doi.org/10.3390/ma15103499
Kolchin A, Shuleiko D, Martyshov M, Efimova A, Golovan L, Presnov D, Kunkel T, Glukhenkaya V, Lazarenko P, Kashkarov P, et al. Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation. Materials. 2022; 15(10):3499. https://doi.org/10.3390/ma15103499
Chicago/Turabian StyleKolchin, Aleksandr, Dmitrii Shuleiko, Mikhail Martyshov, Aleksandra Efimova, Leonid Golovan, Denis Presnov, Tatiana Kunkel, Victoriia Glukhenkaya, Petr Lazarenko, Pavel Kashkarov, and et al. 2022. "Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation" Materials 15, no. 10: 3499. https://doi.org/10.3390/ma15103499