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Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

1
Integrated Centre for Environmental Science Studies in the North-East Development Region-CERNESIM, “Al. I. Cuza” University of Iasi, 700506 Iasi, Romania
2
Université de Lille, CNRS, UMR 8523-PhLAM-Physique des Lasers, Atomes et Molécules, CERLA-Centre d’Etudes et de Recherches Lasers et Applications, Lille F-59000, France
3
National Institute for Lasers, Plasma and Radiation Physics, RO-077125 Magurele-Bucharest, Romania
4
Faculty of Physics, “Al. I. Cuza” University of Iasi, 700506 Iasi, Romania
5
Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice, Czech Republic
6
Université de Rennes 1, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)–UMR 6226, F-35000 Rennes, France
7
Faculty of Materials Science and Engineering, “Gheorghe Asachi” Technical University of Iasi, 700050 Iasi, Romania
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(5), 676; https://doi.org/10.3390/nano9050676
Received: 23 March 2019 / Revised: 18 April 2019 / Accepted: 23 April 2019 / Published: 1 May 2019
(This article belongs to the Special Issue Synthesis and Modification of Nanostructured Thin Films)
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Abstract

Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results showed that the films deposited by ns-PLD revealed droplets on the surface together with a decreased Te concentration and Sb over-stoichiometry. Thin films with improved surface roughness and chemical compositions close to nominal values were deposited by ps- and fs-PLD. The X-ray diffraction and Raman spectroscopy results showed that the samples obtained with ns pulses were partially crystallized while the lower fluences used in ps- and fs-PLD led to amorphous depositions. The optical parameters of the ns-PLD samples were correlated to their structural properties. View Full-Text
Keywords: pulsed laser deposition; chalcogenide thin films; Raman spectroscopy; spectroscopic ellipsometry pulsed laser deposition; chalcogenide thin films; Raman spectroscopy; spectroscopic ellipsometry
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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MDPI and ACS Style

Bulai, G.; Pompilian, O.; Gurlui, S.; Nemec, P.; Nazabal, V.; Cimpoesu, N.; Chazallon, B.; Focsa, C. Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation. Nanomaterials 2019, 9, 676.

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