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Article

Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5

1
National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
2
Apel Laser Ltd., Vanatorilor 25, 077135 Mogosoaia, Romania
3
Horia Hulubei National Institute of Physics & Nuclear Engineering, 077125 Magurele, Romania
*
Author to whom correspondence should be addressed.
Materials 2021, 14(13), 3663; https://doi.org/10.3390/ma14133663
Received: 11 June 2021 / Revised: 25 June 2021 / Accepted: 27 June 2021 / Published: 30 June 2021
Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD. In the MSPLD technique, the same bulk target is used for sputtering but also for PLD at the same time. The structural and optical properties of the as-deposited and annealed thin films were characterized by Rutherford backscattering spectrometry, X-ray reflectometry, X-ray diffraction, Raman spectroscopy and spectroscopic ellipsometry. MS has the advantage of easily leading to fully amorphous films and to a single crystalline phase after annealing. MS also produces the highest optical contrast between the as-deposited and annealed films. PLD leads to the best stoichiometric transfer, whereas the annealed MSPLD films have the highest mass density. All the as-deposited films obtained with the three methods have a similar optical bandgap of approximately 0.7 eV, which decreases after annealing, mostly in the case of the MS sample. This study reveals that the properties of GST-225 are significantly influenced by the deposition technique, and the proper method should be selected when targeting a specific application. In particular, for electrical and optical phase change memories, MS is the best suited deposition method. View Full-Text
Keywords: magnetron sputtering; pulsed laser deposition; Ge2Sb2Te5; Raman spectroscopy; spectroscopic ellipsometry; band gap magnetron sputtering; pulsed laser deposition; Ge2Sb2Te5; Raman spectroscopy; spectroscopic ellipsometry; band gap
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MDPI and ACS Style

Simandan, I.-D.; Sava, F.; Buruiana, A.-T.; Galca, A.-C.; Becherescu, N.; Burducea, I.; Mihai, C.; Velea, A. Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5. Materials 2021, 14, 3663. https://doi.org/10.3390/ma14133663

AMA Style

Simandan I-D, Sava F, Buruiana A-T, Galca A-C, Becherescu N, Burducea I, Mihai C, Velea A. Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5. Materials. 2021; 14(13):3663. https://doi.org/10.3390/ma14133663

Chicago/Turabian Style

Simandan, Iosif-Daniel, Florinel Sava, Angel-Theodor Buruiana, Aurelian-Catalin Galca, Nicu Becherescu, Ion Burducea, Claudia Mihai, and Alin Velea. 2021. "Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5" Materials 14, no. 13: 3663. https://doi.org/10.3390/ma14133663

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