12,052 Results Found

$\mathrm{M}{\mathrm{n}}_5\mathrm{G}{\mathrm{e}}_3$ is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of $\mathrm{M}{\mathrm{n}}_5\mathrm{G}{\mathrm{e}}_3$-based contacts on a Ge/SiGe quantum well heterostructure via solid-state...

Direct band electroluminescence (EL) from tensile-strained Si_0.13Ge_0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and band...

Band structure and gain in a Ge/Ge_1-xSn_x/Ge quantum well are described theoretically using a 14-band k.p model. It has been shown that the quantum well width and the α-Sn concentration considerably modify the conduction and valence subband stru...

The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Ma...

The solidification behavior and microstructural evolution of Al–Ge microparticles were investigated on Si, SiO₂, Al₂O₃, amorphous carbon, and ZrO₂ substrates. Micrometer-sized particles with a hypereutectic composition were produced by melting...

Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb₂Te₃ shell over GeTe and Ge-rich Ge-Sb-Te core...

With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are t...

Beyond the macroscopic perspective, this study microscopically investigates Si_1−xGe_x(001)-2×1 samples that were grown on the epi Ge(001) and epi Si(001) substrates via molecular-beam epitaxy, using the high-resolution synchrotron radiatio...

In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic prop...

In this paper, we introduce the notion of intuitionistic fuzzy GE-algebra by combining the concepts of GE-algebras and intuitionistic fuzzy sets. We provide a necessary and sufficient condition for an intuitionistic fuzzy set to form an intuitionisti...

According to the spatial dimension, equation type, and time sequence, the latest progress in controllability of stochastic linear systems and some unsolved problems are introduced. Firstly, the exact controllability of stochastic linear systems in fi...

Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interest...

In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physic...

Controllability is a basic problem in the study of stochastic generalized systems. Compared with ordinary stochastic systems, the structure of stochastic singular systems is more complex, and it is necessary to study the controllability of stochastic...

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb&nd...

Enrichment of GeSbTe alloys with germanium has been proposed as a valid approach to increase the crystallization temperature and therefore to address high-temperature applications of non-volatile phase change memories, such as embedded or automotive...

In this work, nanocrystalline Ge_1−xSn_x alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid t...

Germanium (Ge) has been recognized as a critical strategic metal due to its high-technology implications. It is predominantly found in sphalerite within the Pb-Zn deposits, whose genesis is closely related to chloride-bearing hydrothermal activities....

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge_0.8Si_0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), incl...

The Huize Ge-rich Pb-Zn deposit is an important part of the Sichuan–Yunnan–Guizhou carbonate-hosted Pb-Zn metallogenic area and is one of the most representative super-large deposits in the northeastern Yunnan Pb-Zn ore concentration area...

In this study, in situ P-doping of Ge-based layers has been studied and compared with implanted layer profiles acting as absorbent top layer in PIN photodetectors. Several structures containing multilayers of n⁺-Ge/i-Ge, n⁺-GeSi/i-Ge, and n⁺-Ge/i-GeS...

The sufficient aspects of model leading to the E(5) symmetry have been proved by presenting E(5) characteristic of the transitional nuclei 64-80Ge. The positive parity states of even-mass Ge nuclei within the framework of Interacting Boson Model have...

The performance of optoelectronic devices is affected by various noise sources. A notable factor is the 4.2% lattice mismatch at the Ge/Si interface, which significantly influences the efficiency of Ge-on-Si photodetectors. These noise sources can be...

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorpo...

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising fo...

A Ge₆₇Cu₃₃ (16 nm) layer and a Ge (3 nm)/Ge₆₇Cu₃₃ (16 nm) bilayer were grown by sputtering at room temperature and used as the recording films for write-once blue laser media. In comparison to the crystallization temperature of Ge in a GeCu film (380...

Ge_1−xSn_x growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge_1−xSn_x on Ge/GaAs/AlAs/sapphire we...

In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect densi...

Molecular dynamics simulations using Tersoff potential were performed in order to study the evolution of the atomic packing structures, loading states on the atoms, and tensile tests, as well as the thermal properties of Si/Ge core–shell nanowi...

In this paper, we investigate the theory of nonexpansive mappings in the framework of fuzzy normed GE-algebras. After recalling the fundamental concepts of GE-algebras and fuzzy GE-norms, we introduce the notion of fuzzy nonexpansive mappings and exa...

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/Si₃N₄/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self–assemble...

The process of germanium–tannin complex is the oldest form of technology for extracting germanium from Ge-containing solutions. This reaction mechanism is relatively controversial as it imposes restrictions on ideas and methods for reducing the...

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a p...

Epitaxial in situ doped Si_0.73Ge_0.27 alloys were grown selectively on patterned bulk Ge and bulk Si wafers. Si_0.73Ge_0.27 layers with a surface roughness of less than 3 nm were demonstrated. Selectively grown p⁺Si_0.73Ge_0.27 layers exhibited a resistiv...

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we sy...

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a cha...

Amorphous-Ge (α-Ge) or free-standing nanoparticles (NPs) synthesized via hydrogen-free plasma-enhanced chemical vapor deposition (PECVD) were applied as transmissive or reflective saturable absorbers, respectively, for starting up passively mod...

Cu₂ZnSn(S,Se)₄ (CZTSSe) and Cu₂Zn(Sn,Ge)(S,Se)₄ (CZTGSSe) thin films were prepared based on a non-vacuum solution method. The CZTSSe films were obtained by annealing the solution-deposited precursor films with Se, while the CZTGSSe films were obtaine...

A low-temperature post-processing Al-migration module is used to achieve separate absorption, charge, and multiplication (SACM) functionality in vertical Ge-on-Si photodiodes without dedicated charge-layer formation by implantation or epitaxy. During...

The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be...

The corrosion behavior of Mg-3Al-xGe (x = 1, 3, 5) alloy in as-cast and as-solid was investigated by virtue of microstructure, corrosion morphology observation, and electrochemical measurement. Among the as-cast alloys, the corrosion rate of Mg-3Al-1...

Glycoprotein E (gE) and glycoprotein I (gI) are expressed as a heterodimer on the surface of Herpes simplex virus (HSV). Glycoprotein E binds Fc domain of immunoglobulin G (IgG) and inhibits activities mediated by the IgG Fc domain, contributing to i...

The structural, mechanical, anisotropic, electronic and thermal properties of Si, Si_0.667Ge_0.333, Si_0.333Ge_0.667 and Ge in P4₂/ncm phase are investigated in this work. The calculations have been performed with an ultra-soft pseudopotential by using t...

Recently demonstrated 3D networks of Ge quantum wires in an alumina matrix, produced by a simple magnetron sputtering deposition enables the realization of nanodevices with tailored conductivity and opto-electrical properties. Their growth and orderi...

The Tao-Ge School refers to the Taoists Ge Hong and Tao Hongjing as the main representatives in the Six dynasties period. It also includes numerous alchemists, physicians, and craftsmen who constituted a Daoist science and technology school in the Mi...

Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO₂] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while...

We investigated the mechanism and kinetics of the formation of metastable BiGe solid phases during the amorphous-to-crystalline transformation of Ge films in contact with Bi. Ge/Bi/Ge sandwich films with a Bi film between amorphous Ge films, which we...

The properties of flux-cored Zn-Al filler metals are prone to deteriorating due to corrosion, making filler metals unusable. In this study, flux-cored Zn-2Al-xGe (x = 0, 0.3, 0.5, and 0.8 wt.%) filler metals are prepared to explore the effect of mino...

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type o...

In this study, we propose a revised structural model for highly ordered synthetic Ge-akaganéite, a stable analogue of tunnel-type Fe-oxyhydroxide, based on the Rietveld refinement of synchrotron X-ray diffraction data and density functional th...