Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
1
College of Science, Inner Mongolia University of Technology, Hohhot 010051, China
2
College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
3
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Materials 2013, 6(6), 2130-2142; https://doi.org/10.3390/ma6062130
Received: 8 March 2013 / Revised: 9 May 2013 / Accepted: 13 May 2013 / Published: 24 May 2013
(This article belongs to the Section Structure Analysis and Characterization)
The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.
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Keywords:
misfit dislocation; strain; Ge/Si heterostructure; geometric phase analysis; peak pairs analysis
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MDPI and ACS Style
Li, J.; Zhao, C.; Xing, Y.; Su, S.; Cheng, B. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface. Materials 2013, 6, 2130-2142.
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