Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
by
Papichaya Chaisakul 1,*
,
Vladyslav Vakarin 2,3,†,
Jacopo Frigerio 4,
Daniel Chrastina 4,
Giovanni Isella 4,
Laurent Vivien 2 and
Delphine Marris-Morini 2
Papichaya Chaisakul 1,*,
Vladyslav Vakarin 2,3,†,
Jacopo Frigerio 4,
Daniel Chrastina 4,
Giovanni Isella 4,
Laurent Vivien 2 and
Delphine Marris-Morini 2
1
Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
2
Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris Saclay, Université Paris Sud, CNRS, 91405 Orsay, France
3
Imec, Kapeldreef 75, 3001 Leuven, Belgium
4
L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy
*
Author to whom correspondence should be addressed.
†
Current address: Kapeldreef 75, 3001 Leuven, Belgium.
Photonics 2019, 6(1), 24; https://doi.org/10.3390/photonics6010024
Received: 13 December 2018 / Revised: 20 February 2019 / Accepted: 21 February 2019 / Published: 1 March 2019
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.
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Keywords:
Ge/SiGe; multiple quantum wells; electro-absorption modulator; photodetector; light emitting diode; waveguide
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MDPI and ACS Style
Chaisakul, P.; Vakarin, V.; Frigerio, J.; Chrastina, D.; Isella, G.; Vivien, L.; Marris-Morini, D. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects. Photonics 2019, 6, 24.
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