Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
Abstract
:1. Introduction
2. Research Progress for Ge(GeSn) and InGaAs SWIR APDs
2.1. Typical Structures for Ge(GeSn) and InGaAs SWIR APDs
2.2. Research Progress for Ge (GeSn) SWIR APDs
2.2.1. Material Properties for Ge and GeSn
Year | Institution | Methods | Sn (%) | Ref. |
---|---|---|---|---|
1987 | University of Notre Dame | Tight-binding calculations using virtual-crystal approximation (VCA). | >20 | [48] |
1989 | Swiss Federal Institute of Technology | Self-consistent ab initio pseudo-potential calculations in VCA. | 27–74 | [49] |
1999 | Michigan Technical University | First-principles calculation in nonlocal density approximation to density functional theory (GGA) with Becke exchange functional with Ferdew-Wang’s correlation functional. | 50 | [50] |
2007 | University of Leeds | Charge self-consistent pseudo-potential Xα method. | 17 | [51] |
2008 | Fudan University | First-principles fully relativistic band structure method and a more accurate approach that considers core-level volume deformation (VD) potential. | 25, 50, 75 | [52] |
2011 | Stanford University | First-principles calculations using density function theory (DFT) with GAA+U. | 3, 6 | [53] |
2012 | National University of Singapore | Empirical pseudo-potential method (EPM), 8-band k.p method | 0–20. | [54] |
2012 | Shenyang University of Technology | First principles calculations based on norm-conserving pseudo-potentials, density function theory (DFT), and density functional perturbation theory (DFPT). | —— | [55] |
2013 | Stanford University | Virtual crystal approximation (VCA) within the framework of the nonlocal empirical pseudo-potential method (NL-EPM). | 0–20, 7 | [56] |
2014 | ETH Zurich | Empirical pseudopotential method (EPM) along with virtual crystal approximation (VCA). | 0–20 | [57] |
2015 | Chinese Academy of Science, Institute of Semiconductor | First-principle calculations based on DFT are performed using the Vienna ab initio simulation package (VASP) code. To correct the underestimation of the bandgap, the GGA+U approach with Perdew–Burke–Ernzerhof (PBE) is employed to describe the electron exchange and correlation. | 0–20, 8.5 | [58] |
2017 | Wroclaw University of Science and Technology | First-principle calculations based on DFT along with Tran and Blaha MBJLDA functions. All calculations have been performed with the all-electron full potential WIEN2k code, which has recently been proven to be one of the most accurate DFT codes. | 3.7–66.7 | [46] |
2018 | University College Cork | First-principle calculations based on DFT, including Heyd Scuseri Ernzerhof (HSE) hybrid functions, using the Vienna Ab initio Simulation Package (VASP). | 6.25 | [59] |
2019 | National Chiao Tung University | Nonlocal empirical pseudopotential method (EPM) with modified virtual crystal approximation (VCA), 8-band k.p model. | 0–15, 7.1 | [60] |
2019 | Nanyang Technological University | Empirical tight binding and ab initio methods, full-zone 30-band k.p model. | 0–30, 7.25 | [61] |
2020 | George Washington Unviersity | Combining statistical sampling based on the Monte Carlo method and density functional theory (DFT) calculation using the Vienna Ab initio Simulation Package (VASP) based on the projector augmented wave method. | 25, 8 | [62] |
2020 | Tiangong University | First-principle calculation via the sX-LDA method, using the Cambridge Sequential Total Energy Package (CASTEP) code based on the DFT, The norm-conserving pseudopotentials (NCPP) are used to describe the interactions between the electrons and ionic cores. | 0–30, 6.25 | [63] |
2021 | University College Cork | First-principle calculations based on Kohn–Sham DFT, Structural relaxations are carried out in the local density approximation (LDA), and electronic band structures are calculated using the Tran–Blaha modified Becke–Johnson (TB-mBJ) meta-generalized gradient approximation (meta-GGA) exchange-correlation potential in order to overcome the band gap underestimation typical of the LDA in the Kohn–Sham formalism. | 0–100, 5, 11, 25 | [64] |
2.2.2. Mesa Geometry Ge(GeSn)/Si APDs
2.2.3. Planar Geometry Ge/Si APDs
2.2.4. Other Novel Ge(GeSn) Avalanche Device Structures
2.3. Research Progress for InGaAs SWIR APDs
2.3.1. Material Property for InGaAs
2.3.2. Mesa Geometry InGaAs/InP and InGaAs/InAlAs APDs
2.3.3. Planar Geometry InGaAs/InP and InGaAs/InAlAs APDs
2.3.4. Other Novel InGaAs Avalanche Device Structures
3. SWIR APDs Focal Plane Arrays (FPAs)
3.1. Ge/Si APDs FPAs
3.2. InGaAs APDs FPAs
3.3. Challenges
3.3.1. Challenges for Ge(GeSn)/Si APDs
3.3.2. Challenges for InGaAs/InP APDs and InGaAs/InAlAs APDs
4. Conclusions and Perspectives
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Diameter (μm) | Temperature (K) | SPDE (%) | DCRs | Jitter (ps) | NEP (WHz−1/2) |
---|---|---|---|---|---|
100 | 125 | 38 | A vast improvement when compared to previous Ge-on-Si work, staying below 100 kcps for an excess bias of up to 6.5% | 310 | 1.9 × 10−16@78 K |
100 | 26 | ||||
80 | 22 | ||||
50 | 125 | 29 | Approximately 4 times greater than the 26 µm device at each excess bias level recorded (380 kcps) | 210 ± 10 | 1.6 × 10−16 |
26 | 125 | 28 | DCRs observed from the 26 µm device were extremely low (86 kcps) | 157 ± 10 | 9.8 × 10−17 |
Index | Ge (GeSn) APDs | InGaAs APDs |
---|---|---|
Growth technology | MBE, RPCVD | MBE, MOCVD |
Substrate | Si | InP |
Device structure | SACM | SAGCM |
Multiplication region | Si | InAlAs or InP |
Absorption region | Ge (GeSn) | InGaAs |
Wafer size | 8–12 inch available | 2–4 inch |
Price | Low | High |
Wavelength range | 1.1–3 μm | 1–2.5 μm |
Technology Maturity | Research and Development | Commercialization |
Product | No | Yes |
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Miao, Y.; Lin, H.; Li, B.; Dong, T.; He, C.; Du, J.; Zhao, X.; Zhou, Z.; Su, J.; Wang, H.; et al. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region. Nanomaterials 2023, 13, 606. https://doi.org/10.3390/nano13030606
Miao Y, Lin H, Li B, Dong T, He C, Du J, Zhao X, Zhou Z, Su J, Wang H, et al. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region. Nanomaterials. 2023; 13(3):606. https://doi.org/10.3390/nano13030606
Chicago/Turabian StyleMiao, Yuanhao, Hongxiao Lin, Ben Li, Tianyu Dong, Chuangqi He, Junhao Du, Xuewei Zhao, Ziwei Zhou, Jiale Su, He Wang, and et al. 2023. "Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region" Nanomaterials 13, no. 3: 606. https://doi.org/10.3390/nano13030606