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Article

Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters

1
Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev Ave., 13, 630090 Novosibirsk, Russia
2
Physical Faculty, Novosibirsk State University, Pirogova Street, 2, 630090 Novosibirsk, Russia
3
Boreskov Institute of Catalysis SB RAS, Lavrentiev Ave., 5, 630090 Novosibirsk, Russia
4
CNRS, IJL, Université de Lorraine, F-54000 Nancy, France
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(12), 2103; https://doi.org/10.3390/electronics9122103
Received: 10 November 2020 / Revised: 5 December 2020 / Accepted: 7 December 2020 / Published: 10 December 2020
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500 °C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science. View Full-Text
Keywords: germanosilicate glass; memristor; Ge nanoclusters; resistance states; thin films germanosilicate glass; memristor; Ge nanoclusters; resistance states; thin films
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MDPI and ACS Style

Volodin, V.A.; Geydt, P.; Kamaev, G.N.; Gismatulin, A.A.; Krivyakin, G.K.; Prosvirin, I.P.; Azarov, I.A.; Fan, Z.; Vergnat, M. Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters. Electronics 2020, 9, 2103. https://doi.org/10.3390/electronics9122103

AMA Style

Volodin VA, Geydt P, Kamaev GN, Gismatulin AA, Krivyakin GK, Prosvirin IP, Azarov IA, Fan Z, Vergnat M. Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters. Electronics. 2020; 9(12):2103. https://doi.org/10.3390/electronics9122103

Chicago/Turabian Style

Volodin, Vladimir A., Pavel Geydt, Gennadiy N. Kamaev, Andrei A. Gismatulin, Grigory K. Krivyakin, Igor P. Prosvirin, Ivan A. Azarov, Zhang Fan, and Michel Vergnat. 2020. "Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters" Electronics 9, no. 12: 2103. https://doi.org/10.3390/electronics9122103

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