Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Sample | Orientation | 2θ (Deg.) | FWHM (Deg.) | Crystalline Size (nm) | Sn Composition (%) |
---|---|---|---|---|---|
400 °C | (111) | 27.16 | 0.4208 | 20.30 | 2.7 |
(220) | 45.20 | 0.9012 | 9.97 | ||
450 °C | (111) | 27.22 | 0.3653 | 23.38 | 1.5 |
(220) | 45.25 | 0.5963 | 15.05 |
Samples | Ge-Ge (cm−1) | Peak Intensity (a.u.) | FWHM (cm−1) | Raman Shift * (cm−1) | Raman Shift (cm−1) | WL/WR |
---|---|---|---|---|---|---|
As-grown | 276.32 | 661.00 | 45 | 24.71 | - | - |
300 °C | 274.78 | 621.611 | 42 | 26.25 | - | - |
350 °C | 274.62 | 659.833 | 35 | 26.41 | - | - |
400 °C | 294.39 | 1773.83 | 12.76 | 6.64 | 18.07 | 3.231 |
450 °C | 296.60 | 1719.00 | 8.29 | 4.43 | 20.28 | 1.274 |
Samples | As-Sputtered | 300 °C | 350 °C | 400 °C | 450 °C |
---|---|---|---|---|---|
Surface Roughness (nm) | 1.02 | 1.18 | 1.2 | 1.77 | 2.85 |
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Mahmodi, H.; Hashim, M.R.; Soga, T.; Alrokayan, S.; Khan, H.A.; Rusop, M. Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates. Materials 2018, 11, 2248. https://doi.org/10.3390/ma11112248
Mahmodi H, Hashim MR, Soga T, Alrokayan S, Khan HA, Rusop M. Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates. Materials. 2018; 11(11):2248. https://doi.org/10.3390/ma11112248
Chicago/Turabian StyleMahmodi, Hadi, Md Roslan Hashim, Tetsuo Soga, Salman Alrokayan, Haseeb A. Khan, and Mohamad Rusop. 2018. "Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates" Materials 11, no. 11: 2248. https://doi.org/10.3390/ma11112248