Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Lin, G.; Chen, N.; Zhang, L.; Huang, Z.; Huang, W.; Wang, J.; Xu, J.; Chen, S.; Li, C. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate. Materials 2016, 9, 803. https://doi.org/10.3390/ma9100803
Lin G, Chen N, Zhang L, Huang Z, Huang W, Wang J, Xu J, Chen S, Li C. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate. Materials. 2016; 9(10):803. https://doi.org/10.3390/ma9100803
Chicago/Turabian StyleLin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng. 2016. "Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate" Materials 9, no. 10: 803. https://doi.org/10.3390/ma9100803