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Article

Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

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CNR—Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy
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CNR—Institute for Microelectronics and Microsystems, Via Gobetti 101, 40129 Bologna, Italy
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CNR—Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy
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CNR—Institute for Microelectronics and Microsystems, Strada VIII 5, 95121 Catania, Italy
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Author to whom correspondence should be addressed.
Academic Editor: Dongchen Qi
Nanomaterials 2021, 11(12), 3358; https://doi.org/10.3390/nano11123358
Received: 2 November 2021 / Revised: 1 December 2021 / Accepted: 8 December 2021 / Published: 10 December 2021
(This article belongs to the Special Issue Synthesis, Properties and Applications of Germanium Chalcogenides)
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge–Sb–Te nanowires were self-assembled through the vapor–liquid–solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge–Sb–Te core and Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition. View Full-Text
Keywords: MOCVD; VLS; phase-change memory; nanowires; core-shell; Ge–Sb–Te; Ge–Sb–Te/Sb2Te3 MOCVD; VLS; phase-change memory; nanowires; core-shell; Ge–Sb–Te; Ge–Sb–Te/Sb2Te3
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MDPI and ACS Style

Kumar, A.; Cecchini, R.; Wiemer, C.; Mussi, V.; De Simone, S.; Calarco, R.; Scuderi, M.; Nicotra, G.; Longo, M. Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition. Nanomaterials 2021, 11, 3358. https://doi.org/10.3390/nano11123358

AMA Style

Kumar A, Cecchini R, Wiemer C, Mussi V, De Simone S, Calarco R, Scuderi M, Nicotra G, Longo M. Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition. Nanomaterials. 2021; 11(12):3358. https://doi.org/10.3390/nano11123358

Chicago/Turabian Style

Kumar, Arun, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, and Massimo Longo. 2021. "Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition" Nanomaterials 11, no. 12: 3358. https://doi.org/10.3390/nano11123358

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