SiO2 is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO2...
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate perf...
This paper details the design, fabrication, and characterization of highly uniform batch-fabricated sidewall etched vertical nanogap tunneling junctions for bio-sensing applications. The device consists of two vertically stacked gold electrodes separ...
Ag–SiO2 nanomace arrays were prepared on a two-dimensional ordered colloidal (2D) polystyrene sphere template by co-sputtering Ag and SiO2 in a magnetron sputtering system. The lateral size of the nanomaces and the distance between the neighbor...
As an emerging platform for high-precision sensing, integrated silicon-waveguide-based cavity optomechanical devices face a critical fabrication challenge in the co-fabrication of silicon-on-insulator (SOI) micromechanical structures and optical wave...
Patterning of thin films with lithography techniques for making semiconductor devices has been facing increasing difficulties with feature sizes shrinking to the sub-10 nm range, and alternatives have been actively sought from area-selective thin fil...
Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this re...
Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the ma...
Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etc...
We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalit...
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a sev...
As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, su...
Severe volumetric expansion (~400%) limits practical application of silicon nanoparticles as anode materials for next-generation lithium-ion batteries (LIBs). Here, we describe the fabrication and characterization of a conformal polydopamine carbon s...
Surface-enhanced Raman spectroscopy (SERS) has long been an ultrasensitive technique for trace molecule detection. However, the development of a sensitive, stable, and reproducible SERS substrate is still a challenge for practical applications. Here,...
Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO2 nanopillar arrays decorated with Ag nanoparti...
This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues aft...
Silicon carbide (SiC) is widely utilized in semiconductors, microelectronics, optoelectronics, and other advanced technologies. However, its inherent characteristics, such as its hardness, brittleness, and high chemical stability, limit the processin...
We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom sur...
In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC) with a high refractive index n = 1.578 on silica (SiO2), exhibiting an index contrast of Δn = 8.2%. Silicon oxycarbide layers were deposited b...
Silicon/mesoporous carbon (Si/MC) composites with optimum Si content, in which the volumetric energy density would be maximized, while volume changes would be minimized, have been developed. The composites were prepared by dispersing Si nanoparticles...
A novel fiber-optic probe based on reflection-based localized surface plasmon resonance (LSPR) was developed to quantify the concentration of hydrofluoric acid (HF) in aqueous solutions. The LSPR sensor was constructed with a gold nanoparticle-modifi...
Amorphous carbon hard mask (ACHM) films have been widely applied as protective components and hard etching masks in lithography and dry etching processes. The capability of lithography is directly dependent on the step coverage (SC) of the ACHM. Poor...
Silicon nanoparticles are used to enhance the anode specific capacity for the lithium-ion cell technology. Due to the mechanical deficiencies of silicon during lithiation and delithiation, one of the many strategies that have been proposed consists o...
Chromatographic interaction between infiltrating solutions of racemic mixtures of enantiomers and enantiomorphic minerals with chiral excess has been proposed as a scenario for the emergence of biomolecular homochirality. Enantiomer separation is sup...
In this study, thin films of zinc oxide doped with fluorine ZnO: F were deposited via ultrasonic spray pyrolysis (USP) with an atomic ratio of [F/Zn] in a starting solution of 15 at.% on borosilicate glass coverslips and SiO2/Si substrates. The struc...
Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si3N4) provides...
Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according...
Amorphous carbon hard mask (ACHM) films are widely used as etching hard masks in 3D-NAND flash memory, which has put forward higher requirements in the film deposition rate, film transparency, uniformity, and selective etching. In this work, the ACHM...
The purpose of this paper was to investigate the influence of fabrication process uncertainty on terahertz metasurface quality. The focus was on the effect of metasurface fabrication inaccuracy on resonances. To the best of our knowledge, this is the...
Porous permeable films materials have very broad prospects in the treatment of sludge-containing waste water due to their large surface area and good microfiltration. In this work, highly ordered porous membranes have been prepared successfully on ic...
This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-...
This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/depos...
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant pola...
A simple fabrication method for the surface modification of an electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO2) layer using a t...
In this study, an ultra-wideband absorber spanning from UV-B to middle-IR was designed and analyzed using a novel structure. The multilayer metamaterial, arranged from bottom to top, consisted of an Al metal layer, a lower SiO2 layer, a graphite laye...
We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars w...
In the present work, we present the process of preparing CdS nanostructures based on templating synthesis using chemical deposition (CD) on a SiO2/Si substrate. A 0.7 μm thick silicon dioxide film was thermally prepared on the surface of an n-type...
In this paper, we demonstrate a comprehensive study of NF3-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic etching proce...
This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF)...
A 365-nm UV LED was fabricated based on embedded nanoporous AlGaN distributed Bragg reflectors (DBR) by electrochemical etching. The porous DBR had a reflectance of 93.5% at the central wavelength of 365 nm; this is the highest value of porous AlGaN...
We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO3) deposited into SiO2/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 108 ions/cm2) fo...
Expanded multilayered vermiculite (VMT) was successfully used as catalyst support and Ni/VMT synthesized by microwave irradiation assisted synthesis (MIAS) exhibited excellent performance in our previous work. We also developed a two-dimensional poro...
In order to study the weakening mechanism and mechanical behaviors of hard lamprophyre of Carboniferous Permian coal-bearing strata in China’s mining area, lamprophyre samples were subjected to static rock dissolution experiments with pH values...
Silicon wafer slicing is a crucial process during solar cell fabrication, but it often stains the silicon wafer surface. Thus, this work systematically investigated the composition, source, and cleaning method of typical white spot stains on silicon...
The adsorption-enhancing TiO2-SBA-15 photocatalyst has been synthesized by an in situ etching displacement method, which possesses unique regular hexagonal pores and large specific surface area. The as-prepared TiO2-SBA-15 can effectively adsorb and...
The traditional handmade catalytic combustion gas sensor has some problems such as a pairing difficulty, poor consistency, high power consumption, and not being interchangeable. To address these issues, integrated double catalytic combustion of alcoh...
We present a simplified, highly reproducible process to fabricate arrays of tapered silicon micro-funnels and micro-channels using a single lithographic step with a silicon oxide (SiO2) hard mask on at a wafer scale. Two approaches were used for the...
This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the...
Existing etch endpoint detection (EPD) methods, primarily based on single wavelengths, have limitations, such as low signal-to-noise ratios and the inability to consider the long-term dependencies of time series data. To address these issues, this st...
Ethanol oxidation reaction (EOR) is an important electrode reaction in ethanol fuel cells. However, there are many problems with commercial ethanol oxidation electrocatalysts today, such as poor durability, poor anti-CO poisoning ability, and low sel...
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