Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions
AbstractThis paper details the design, fabrication, and characterization of highly uniform batch-fabricated sidewall etched vertical nanogap tunneling junctions for bio-sensing applications. The device consists of two vertically stacked gold electrodes separated by a partially etched sacrificial spacer layer of sputtered α-Si and Atomic Layer Deposited (ALD) SiO2. A ~10 nm wide air-gap is formed along the sidewall by a controlled dry etch of the spacer. The thickness of the spacer layer can be tuned by adjusting the number of ALD cycles. The rigorous statistical characterization of the ultra-thin spacer films has also been performed. We fabricated nanogap electrodes under two design layouts with different overlap areas and spacer gaps, from ~4.0 nm to ~9.0 nm. Optical measurements reported an average non-uniformity of 0.46 nm (~8%) and 0.56 nm (~30%) in SiO2 and α-Si film thickness respectively. Direct tunneling and Fowler–Nordheim tunneling measurements were done and the barrier potential of the spacer stack was determined to be ~3.5 eV. I–V measurements showed a maximum resistance of 46 × 103 GΩ and the average dielectric breakdown field of the spacer stack was experimentally determined to be ~11 MV/cm. View Full-Text
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Banerjee, A.; Khan, S.-U.H.; Broadbent, S.; Likhite, R.; Looper, R.; Kim, H.; Mastrangelo, C.H. Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions. Nanomaterials 2019, 9, 727.
Banerjee A, Khan S-UH, Broadbent S, Likhite R, Looper R, Kim H, Mastrangelo CH. Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions. Nanomaterials. 2019; 9(5):727.Chicago/Turabian Style
Banerjee, Aishwaryadev; Khan, Shakir-Ul H.; Broadbent, Samuel; Likhite, Rugved; Looper, Ryan; Kim, Hanseup; Mastrangelo, Carlos H. 2019. "Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions." Nanomaterials 9, no. 5: 727.
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