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Volume 10
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10.3390/cryst10020057
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Article

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

by
Monica Bollani
1,*,
Alexey Fedorov
1,
Marco Albani
2,
Sergio Bietti
2,
Roberto Bergamaschini
2,
Francesco Montalenti
2,
Andrea Ballabio
3,
Leo Miglio
2 and
Stefano Sanguinetti
1,2
1
Institute of Photonics and Nanotechnologies—CNR, P.za L. Da Vinci, 20133 Milano, Italy
2
Department of Materials Science, University of Milano – Bicocca, via R. Cozzi 55, 20125 Milano, Italy
3
Department of Physics, Politecnico di Milano, P.zza L. da Vinci, 20133 Milano, Italy
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(2), 57; https://doi.org/10.3390/cryst10020057
Submission received: 19 December 2019 / Revised: 20 January 2020 / Accepted: 21 January 2020 / Published: 22 January 2020
(This article belongs to the Special Issue Semiconductor Heteroepitaxy)
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Abstract

We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.
Keywords: selective-area-epitaxy; GaAs; nanomembranes; III/V integration selective-area-epitaxy; GaAs; nanomembranes; III/V integration

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MDPI and ACS Style

Bollani, M.; Fedorov, A.; Albani, M.; Bietti, S.; Bergamaschini, R.; Montalenti, F.; Ballabio, A.; Miglio, L.; Sanguinetti, S. Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study. Crystals 2020, 10, 57. https://doi.org/10.3390/cryst10020057

AMA Style

Bollani M, Fedorov A, Albani M, Bietti S, Bergamaschini R, Montalenti F, Ballabio A, Miglio L, Sanguinetti S. Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study. Crystals. 2020; 10(2):57. https://doi.org/10.3390/cryst10020057

Chicago/Turabian Style

Bollani, Monica, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio, and Stefano Sanguinetti. 2020. "Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study" Crystals 10, no. 2: 57. https://doi.org/10.3390/cryst10020057

APA Style

Bollani, M., Fedorov, A., Albani, M., Bietti, S., Bergamaschini, R., Montalenti, F., Ballabio, A., Miglio, L., & Sanguinetti, S. (2020). Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study. Crystals, 10(2), 57. https://doi.org/10.3390/cryst10020057

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