Special Issue "Plasma Based Nanomaterials and Their Applications"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Biology and Medicines".

Deadline for manuscript submissions: 31 October 2021.

Special Issue Editor

Prof. Dr. Gheorghe Dinescu
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Guest Editor
National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele, Ilfov country, Romania
Interests: plasma sources; electrical discharges; plasma processing; atmospheric pressure cold plasmas; plasma with liquids; synthesis; characterization and utilization of nanomaterials; composite materials; hybrid materials; thin films and multilayers; surface modification; nanomembranes; plasma decontamination

Special Issue Information

Dear Colleagues,

Processing materials at nanoscale requires tiny entities as atoms, molecules, electrons, ions, and photons, and plasma is a way to produce and control them. Accordingly, a large number of plasma-based procedures, techniques, and instruments have been developed, where plasma imparts reactivity, directionality, charging to species performing the processing. Plasma processing, traditionally performed in vacuum and gas phase, was extended successfully in recent decades to atmospheric pressure and liquid phase.

The goal of this issue is to explore the interrelation between plasma and materials across the atomic scale (plasma species, atoms, and molecules), nanoscale (individual nano-objects like nanoparticles, nanotubes, nanowires, nanosheets, nanocrystals, etc.), microscale (assembled nanostructures in thin films, layers, composites, hybrid nanomaterials), and macroscale (nanomaterial-based devices such as sensors, micro-actuators, electronic chips, micro-supercapacitors, membranes, etc.). A few examples of the envisaged topics are:

 - Plasma processes, systems and methods for nanomaterial fabrication and processing;
- Carbon nanostructure fabrication (graphene, carbon nanowalls, nanotubes, fullerene, diamond nanocrystals, nanoparticles, etc.) by plasma and its applications;
- Gas phase preparation of nanoparticles by plasma (PECVD and PVD methods, including laser ablation);
- Magnetron sputtering gas aggregation (MSGA) processes for cluster and particle fabrication;
 - Hybrid nanomaterials and nanocomposites by plasma and laser processing and their applications;
- Surface nanostructuration by plasma;
- Preparation and processing of nanomaterials by plasma in liquid;
- Fabrication and processing of nanomaterials and nanostructured materials by atmospheric pressure cold and thermal plasmas; 
- Devices and applications of plasma fabricated nanomaterials in engineering, energy, catalysis and photocatalysis, sensing, biology, medicine, and the environment.

We await your contribution in the topics above or other relevant topics with great interest.

Prof. Dr. Gheorghe Dinescu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Plasma synthesis of nanomaterials
  • Plasma in liquid
  • Cold atmospheric plasma
  • Magnetron sputtering gas aggregation
  • Pulsed laser ablation
  • Plasma deposition
  • Surface plasma modification
  • Nano structuration
  • Nanoparticles
  • Carbon nanomaterials
  • Nanomembranes
  • Supercapacitors
  • Sensors
  • Antimicrobial coatings

Published Papers (2 papers)

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Research

Open AccessArticle
Plant Extracts Activated by Cold Atmospheric Pressure Plasmas as Suitable Tools for Synthesis of Gold Nanostructures with Catalytic Uses
Nanomaterials 2020, 10(6), 1088; https://doi.org/10.3390/nano10061088 - 01 Jun 2020
Abstract
Because cold atmospheric pressure plasma (CAPP)-based technologies are very useful tools in nanomaterials synthesis, in this work we have connected two unique in their classes approaches—a CAPP-based protocol and a green synthesis method in order to obtain stable-in-time gold nanoparticles (AuNPs). To do [...] Read more.
Because cold atmospheric pressure plasma (CAPP)-based technologies are very useful tools in nanomaterials synthesis, in this work we have connected two unique in their classes approaches—a CAPP-based protocol and a green synthesis method in order to obtain stable-in-time gold nanoparticles (AuNPs). To do so, we have used an aqueous Gingko biloba leave extract and an aqueous Panax ginseng root extract (untreated or treated by CAPP) to produce AuNPs, suitable for catalytical uses. Firstly, we have adjusted the optical properties of resulted AuNPs, applying UV/Vis absorption spectrophotometry (UV/Vis). To reveal the morphology of Au nanostructures, transmission electron microscopy (TEM) in addition to energy dispersive X-ray scattering (EDX) and selected area X-ray diffraction (SAED) was utilized. Moreover, optical emission spectrometry (OES) in addition to a colorimetric method was used to identify and determine the concentration of selected RONS occurring at the liquid-CAPP interface. Additionally, attenuated total reflectance Fourier transform-infrared spectroscopy (ATR FT-IR) was applied to reveal the active compounds, which might be responsible for the AuNPs surface functionalization and stabilization. Within the performed research it was found that the smallest in size AuNPs were synthesized using the aqueous P. ginseng root extract, which was activated by direct current atmospheric pressure glow discharge (dc-APGD), generated in contact with a flowing liquid cathode (FLC). On the contrary, taking into account the aqueous G. biloba leave extract, the smallest in size AuNPs were synthesized when the untreated by CAPP aqueous G. biloba leave extract was involved in the Au nanostructures synthesis. For catalytical studies we have chosen AuNPs produced using the aqueous P. ginseng root extract activated by FLC-dc-APGD as well as AuNPs synthesized using the aqueous G. biloba leave extract also activated by FLC-dc-APGD. Those NPs were successfully used as homogenous catalysts for the reduction of 4-nitrophenol (4-NP) to 4-aminophenol (4-AP). Full article
(This article belongs to the Special Issue Plasma Based Nanomaterials and Their Applications)
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Open AccessArticle
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Nanomaterials 2020, 10(4), 793; https://doi.org/10.3390/nano10040793 - 20 Apr 2020
Abstract
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device [...] Read more.
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH2F2/CH4/O2/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO2. High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. Full article
(This article belongs to the Special Issue Plasma Based Nanomaterials and Their Applications)
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