Using a single photon avalanche diode (SPAD) as a receiver in an optical wireless communications (OWC) system can effectively expand the transmission distance. However, the performance of the SPAD receiver is usually affected with the bit error rate...
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect tra...
Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results in unusual gate leakage currents with high magnitudes that vary with applied voltages. In this pap...
This work reviews physical concepts, technologies and applications of time-domain diffuse optics based on time-gated single-photon detection. This particular photon detection strategy is of the utmost importance in the diffuse optics field as it unle...
Quantum computation with d-level quantum systems, also known as qudits, benefits from the possibility to use a richer computational space compared to qubits. However, for an arbitrary qudit-based hardware platform, the issue is that a generic qudit o...
In recent decades, haze has become an environmental issue due to its effects on human health. It also reduces visibility and degrades the performance of computer vision algorithms in autonomous driving applications, which may jeopardize car driving s...
It is shown that the integration of a single-photon avalanche diode (SPAD) together with a BiCMOS gating circuit on one chip reduces the parasitic capacitance a lot and therefore reduces the avalanche build-up time. The capacitance of two bondpads, w...
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions. A comparat...
In this study, we present a reconfigurable feedback field-effect transistor (FET) that can operate in both p- and n-type configurations using a feedback mechanism. In contrast to previously reported reconfigurable FETs, our device utilizes a single g...
According to the International Electrotechnical Commission, medium voltage ranges from 1 kV to 36 kV. In this voltage range, the field of power electronics has been focusing on developing power converters with high efficiency. Converters for such app...
In this study, we propose a novel design for a NAND gate using a single semiconductor optical amplifier (SOA) followed by a delay interferometer (DI). This streamlined configuration significantly reduces complexity and cost compared to conventional m...
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages....
This study provides a comprehensive characterization of various isolated single and half-bridge gate drivers over the entire temperature range from room temperature down to −194 °C. Unlike previous studies, which primarily focused on electr...
Food contamination by aflatoxins is an urgent global issue due to its high level of toxicity and the difficulties in limiting the diffusion. Unfortunately, current detection techniques, which mainly use biosensing, prevent the pervasive monitoring of...
Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method to reduce dark noise in biomedical imaging applications where photon events are correlated with a reference clock. Time-gating was also used to obtain timing informat...
An effective way to reduce the power consumption of an integrated circuit is to introduce negative capacitance (NC) into the gate stack. Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a posit...
This work outperforms the previous literatures by proposing a delay-cell-controlled voltage control oscillator (VCO) design for common unipolar, single-gate, and enhancement-mode thin-film transistor (TFT) technologies. A design example with InZnO TF...
A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed...
This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorpo...
A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme...
The detection of peaks shifts in Raman spectroscopy enables a fingerprint reconstruction to discriminate among molecules with neither labelling nor sample preparation. Time-resolved Raman spectroscopy is an effective technique to reject the strong fl...
We have demonstrated the method of threshold voltage (VT) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET...
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation. In this paper...
A leakage current is the most critical parameter to characterize heavy ion radiation damage in SiC MOSFETs. An accurate and refined analysis of the source and generation process of a leakage current is the key to revealing the failure mechanism. Ther...
In this work, we consider an environment formed by incoherent photons as a resource for controlling open quantum systems via an incoherent control. We exploit a coherent control in the Hamiltonian and an incoherent control in the dissipator which ind...
The performance of an active-quenching single-photon avalanche diode (SPAD) array that is based on the tri-state gates of a field programmable gate array (FPGA) is presented. The array is implemented by stacking a bare 4 × 4 N-on-P SPAD array o...
Single-event gate-rupture (SEGR) in the trench vertical double-diffused power MOSFET (VDMOS) occurs at a critical bias voltage during heavy-ion experiments. Fault analysis demonstrates that the hot spot is located at the termination of the VDMOS, and...
The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), convention...
A gating circuit for a photonic quantum simulator is introduced. The gating circuit uses a large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode (SPAD). Nine channels are monolithically implemented in an application...
Quantum-dot cellular automata (QCA) offer a high-performance, low-power alternative to traditional VLSI technology for nanocomputing. However, the existing metal-dot QCA-based parity generators and checker circuits suffer from increased energy dissip...
As a prominent focus in high-voltage power devices, SiC MOSFETs have broad application prospects in the aerospace field. Due to the unique characteristics of the space radiation environment, the reliability of SiC MOSFETs concerning single-event effe...
FDSOI (Fully Depleted Silicon On Insulator) devices have a good performance in anti-single-event circuits. However, the bipolar amplification effect becomes a severe problem due to the buried oxide. The previous models for Single Event Transient (SET...
Fiber reinforcement orientation in thermoplastic injection-molded components is both a strength as well as a weak point of this largely employed manufacturing process. Optimizing the fiber orientation distribution (FOD) considering the shape of the p...
In this paper we present a novel single-photon detector specifically designed for Non-Line-Of-Sight (NLOS) imaging applications within the framework of the DARPA REVEAL program. The instrument is based on a linear 16 × 1 Complementary Metal-Oxi...
In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bis...
This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm) and high fill factor (>20%) as a key e...
Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is crit...
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing,...
The instability of transistor characteristics caused by charge trapping under positive bias temperature (PBT) stress in In0.7Ga0.3As metal oxide semiconductor field-effect transistors (MOSFETs) with single-layer Al2O3 and bi-layer Al2O3/HfO2 gate sta...
Lens gap junctions (GJs) formed by Cx46 and Cx50 are important to keep lens transparency. Functional studies on Cx46 and Cx50 GJs showed that the Vj-gating, single channel conductance (γj), gating polarity, and/or channel open stability could b...
The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relat...
Three-dimensional (3D) imaging under the condition of weak light and low signal-to-noise ratio is a challenging task. In this paper, a 3D imaging scheme based on time-correlated single-photon counting technology is proposed and demonstrated. The 3D i...
The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various appl...
Memory used for storing the configuration bitstream of field programmable gate array in space applications often encounters single event upset problems, which may disrupt the integrity of data in memory and lead to unpredictable failures. For commerc...
Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-µm complementary metal-oxide-semiconductor (CMOS) including a 12-µ...
The research presented was conducted to quantify the effects of butterfly and gate valves located upstream water meters with diameters larger than 50 mm. Errors caused by these valves can have an enormous financial impact taking into consideration th...
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the ci...
Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensiti...
Life on the molecular scale is based on a versatile interplay of biomolecules, a feature that is relevant for the formation of macromolecular complexes. Fluorescence-based two-color coincidence detection is widely used to characterize molecular bindi...
Tracking small, fast-moving unmanned aerial vehicles (UAVs) in thermal infrared (TIR) imagery is a significant challenge due to low-resolution targets, Dynamic Background Clutter, and frequent occlusions. To address this, we introduce MemLoTrack, a n...
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