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A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs

1
Department of Electrical and Electronic Teaching, College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
2
Department of Electronic Engineering, Jinan University, Guangzhou 510632, China
*
Author to whom correspondence should be addressed.
These two authors contributed equally to this work.
Electronics 2019, 8(7), 785; https://doi.org/10.3390/electronics8070785
Received: 10 May 2019 / Revised: 5 June 2019 / Accepted: 12 June 2019 / Published: 14 July 2019
(This article belongs to the Section Semiconductors and Quantum)
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Abstract

A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10−7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations. View Full-Text
Keywords: silicon-on-insulator MOSFETs; surface potential; back-channel potential; full-depletion; analytical I-V model silicon-on-insulator MOSFETs; surface potential; back-channel potential; full-depletion; analytical I-V model
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Xu, C.; Yu, F.; Huang, G.; Deng, W.; Ma, X.; Huang, J. A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs. Electronics 2019, 8, 785.

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