In this paper, a Tunnel FETs (TFETs) and MOSFETs hybrid integrated 9T SRAM (HI-9T) with data-aware write technique is proposed. This structure solves the problem of excessive static power consumption caused by forward p-i-n current in the conventiona...
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN...
Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications. However, their breakdown voltage is severely constrained by electric field cr...
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on...
For high-field power applications of high-temperature superconductors, it became obvious in recent years that nano-engineered artificial pinning centers are needed for increasing the critical current and pinning potential. As opposed to the artificia...
A Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effecti...
In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation f...
This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand...
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excita...
High-power switching applications, such as thyristor valves in a high-voltage direct current converter, can use 4H-SiC. The numerical simulation of the 4H-SiC devices requires specialized models and parameters. Here, we present a numerical simulation...
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forward anode v...
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses. It reveals that the Schottky gate structure lacks effective electrostatic charge...
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in...
The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission...
In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify depe...
This study focuses on enhancing the tunable sensitivity of a photo irradiance sensor (PIS) operating in the near-ultraviolet to visible to near-infrared (NUV-VIS-NIR) spectrum using an indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon o...
The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performance...
The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n&ndas...
A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forw...
24 February 2020
The aim of the present study was to compare external loads (EL) between elite, junior, male and female basketball players. Male (n = 25) and female players (n = 48) were monitored during 11 competitive matches (3 matches per team). EL was measured us...
In this study, a shorted-anode IGBT with an injection-enhanced p-floating layer (IEPF-IGBT) under the N-buffer layer is proposed. Compared to conventional shorted-anode IGBT (SA-IGBT), the IEPF-IGBT has the structural characteristics of an injection-...
This article presents a comprehensive and intuitive analysis of the impact of packaging on diode performance and a two-step method for packaging parameter extraction. This is performed using a single forward bias point, one-port measurements and prob...
Two frequency divider architectures in the Folded MOS Current Mode Logic which allow to operate at ultra-low voltage thanks to forward body bias are presented, analyzed, and compared. The first considered architecture exploits nType and pType divide-...
In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking devic...
The current investigation used somatosensory evoked potentials (SEPs) to assess differences in sensorimotor integration and somatosensory processing variables between asymptomatic individuals with and without forward head posture (FHP). We assessed d...
Herein, the synthesis of ferrocene-containing salts is presented. Acylation of ferrocene (Fc) according to the Friedel–Crafts method led to ω-bromoacyl ferrocenes. The ω-bromoacyl ferrocenes were subsequently introduced to quaterniz...
The n-TiO2 nanoballs–sticks (TiO2 NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO2...
A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in grap...
Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm2 and reverse bia...
Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on p− Boron-doped diamond (BDD) layers (1015–1016 cm−3) w...
Two-dimensional (2D) n-MoS2 nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for the h...
In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-f...
In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result o...
Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a...
Currently, basketball teams use inertial devices for monitoring external and internal workload demands during training and competitions. However, the intensity thresholds preset by device manufacturers are generic and not adapted for specific sports...
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (S...
Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate...
The efficiency of current GaN-based blue laser diodes (LDs) is limited by the high resistance of a thick p-AlGaN cladding layer. To reduce the operation voltage of InGaN blue LDs, we investigated optimum LD structures with an indium tin oxide (ITO) p...
In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p+-Al0.55Ga0.45N/AlGaN/n+-Al0.55Ga0.45N polarization tunnel junctions (PTJs) were modeled to promote carrier tunneling, suppress curr...
In this study, a novel integrated 4H-SiC reverse-conducting gate turn-off thyristor (GTO) featuring an N-type floating (NF) structure is proposed. The proposed NF-structured 4H-SiC GTO outperforms conventional reverse-conducting GTOs in forward condu...
Since the COVID-19 restrictions, hurling games have been played in four quarters instead of two halves. This study described the decrement in running performance between quarters in elite hurling. GPS (10 Hz) were used to collect data from 48 players...
In many sports, the hamstring strain injury is a common injury. There is evidence that the Nordic hamstring exercise (NHE), a knee flexor exercise, can reduce hamstring injury risk in athletes. In research on hamstring injury prevention, eccentric-on...
This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing c...
Electrically detected magnetic resonance (EDMR) is a spectroscopic technique that provides information about the physical properties of materials through the detection of variations in conductivity induced by spin-dependent processes. EDMR has been w...
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-do...
The emergence of GaN-based micro-LEDs has revolutionized display technologies due to their superior brightness, energy efficiency, and thermal stability compared to traditional counterparts. However, the development of red-emitting micro-LEDs on sili...
Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-perfor...
Current challenges in printed circuit board (PCB) assembly require high-resolution deposition of ultra-fine pitch components (<0.3 mm and <60 μm respectively), high throughput and compatibility with flexible substrates, which are poorly met by...
Direct detection (DD) is a straightforward, cost-effective receiving scheme for medium- and short-range fiber-optic communication systems, yet directly accessing phase information presents inherent challenges. The temporal transport-of-intensity equa...
This paper presents a new frequency compensation approach for three-stage amplifiers driving a pF-to-nF capacitive load. Thanks to the cascode Miller compensation, the non-dominant complex pole frequency is extended effectively, and the physical size...
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