Next Article in Journal
Effect of UV and Gamma Irradiation Sterilization Processes in the Properties of Different Polymeric Nanoparticles for Biomedical Applications
Previous Article in Journal
Kinetic Model of Incipient Hydride Formation in Zr Clad under Dynamic Oxide Growth Conditions
Previous Article in Special Issue
Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability
Open AccessArticle

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions

1
Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA 15260, USA
2
Department of Chemistry, University of Pittsburgh, Pittsburgh, PA 15260, USA
3
Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15260, USA
*
Authors to whom correspondence should be addressed.
Materials 2020, 13(5), 1089; https://doi.org/10.3390/ma13051089
Received: 1 December 2019 / Revised: 25 December 2019 / Accepted: 28 January 2020 / Published: 1 March 2020
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature < Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits. View Full-Text
Keywords: p-n junction; graphene; ion doping; electric double layer; polymer electrolyte p-n junction; graphene; ion doping; electric double layer; polymer electrolyte
Show Figures

Graphical abstract

MDPI and ACS Style

Liang, J.; Xu, K.; Arora, S.; Laaser, J.E.; Fullerton-Shirey, S.K. Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions. Materials 2020, 13, 1089.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop