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Open AccessArticle

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

1
SuperGrid Institute, 23 rue Cyprian CS 50289, 69628 Villeurbanne CEDEX, France
2
Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France
*
Author to whom correspondence should be addressed.
Energies 2019, 12(23), 4566; https://doi.org/10.3390/en12234566
Received: 29 October 2019 / Revised: 26 November 2019 / Accepted: 27 November 2019 / Published: 29 November 2019
(This article belongs to the Special Issue Advanced Materials/Devices for Power Electronics)
This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns. View Full-Text
Keywords: SiC 10 kV PiN diode; device processing; electrical characterization; high-voltage device packaging; double-pulse test; smartgrid; MVDC; HVDC SiC 10 kV PiN diode; device processing; electrical characterization; high-voltage device packaging; double-pulse test; smartgrid; MVDC; HVDC
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MDPI and ACS Style

Asllani, B.; Morel, H.; Phung, L.V.; Planson, D. 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization. Energies 2019, 12, 4566.

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