Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
Abstract
:1. Introduction
2. Materials and Methods
2.1. Laser Diode Structure
2.2. Simulation Methods
3. Results and Discussion
3.1. Optimum Thickness of LWG and UWG
3.2. Optimization of EBL
3.3. Optimum Mg Doping Concentration in the p-AlGaN Cladding Layer
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Onwukaeme, C.; Ryu, H.-Y. Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures. Crystals 2021, 11, 1335. https://doi.org/10.3390/cryst11111335
Onwukaeme C, Ryu H-Y. Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures. Crystals. 2021; 11(11):1335. https://doi.org/10.3390/cryst11111335
Chicago/Turabian StyleOnwukaeme, Chibuzo, and Han-Youl Ryu. 2021. "Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures" Crystals 11, no. 11: 1335. https://doi.org/10.3390/cryst11111335