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Open AccessArticle

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

1
School of Basic Sciences, Tra Vinh University, Tra Vinh 87000, Vietnam
2
Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
3
School of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, Vietnam
4
College of Engineering and Technology, Can Tho University, Can Tho 94000, Vietnam
*
Authors to whom correspondence should be addressed.
Coatings 2019, 9(11), 699; https://doi.org/10.3390/coatings9110699
Received: 30 August 2019 / Revised: 17 October 2019 / Accepted: 21 October 2019 / Published: 25 October 2019
(This article belongs to the Special Issue Advanced Strategies in Thin Film Engineering by Magnetron Sputtering)
The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared. View Full-Text
Keywords: p–Mg-InGaN films; RF sputtering; I–V measurement; Cheung’s method; Norde’s method; TE mode p–Mg-InGaN films; RF sputtering; I–V measurement; Cheung’s method; Norde’s method; TE mode
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MDPI and ACS Style

Tuan, T.T.A.; Kuo, D.-H.; Cao, P.T.; Nguyen, V.S.; Pham, Q.-P.; Nghi, V.K.; Tran, N.P.L. Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer. Coatings 2019, 9, 699. https://doi.org/10.3390/coatings9110699

AMA Style

Tuan TTA, Kuo D-H, Cao PT, Nguyen VS, Pham Q-P, Nghi VK, Tran NPL. Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer. Coatings. 2019; 9(11):699. https://doi.org/10.3390/coatings9110699

Chicago/Turabian Style

Tuan, Thi T.A.; Kuo, Dong-Hau; Cao, Phuong T.; Nguyen, Van S.; Pham, Quoc-Phong; Nghi, Vinh K.; Tran, Nguyen P.L. 2019. "Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer" Coatings 9, no. 11: 699. https://doi.org/10.3390/coatings9110699

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