Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer
Tuan, T.T.A.; Kuo, D.-H.; Cao, P.T.; Nguyen, V.S.; Pham, Q.-P.; Nghi, V.K.; Tran, N.P.L. Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer. Coatings 2019, 9, 699. https://doi.org/10.3390/coatings9110699
Tuan TTA, Kuo D-H, Cao PT, Nguyen VS, Pham Q-P, Nghi VK, Tran NPL. Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer. Coatings. 2019; 9(11):699. https://doi.org/10.3390/coatings9110699
Chicago/Turabian StyleTuan, Thi T.A.; Kuo, Dong-Hau; Cao, Phuong T.; Nguyen, Van S.; Pham, Quoc-Phong; Nghi, Vinh K.; Tran, Nguyen P.L. 2019. "Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer" Coatings 9, no. 11: 699. https://doi.org/10.3390/coatings9110699