Next Article in Journal
A Comparison of Alternative Distributed Dynamic Cluster Formation Techniques for Industrial Wireless Sensor Networks
Previous Article in Journal
Performance Evaluation of Target Detection with a Near-Space Vehicle-Borne Radar in Blackout Condition
Article Menu

Export Article

Open AccessArticle

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Department of Information Engineering Infrastructures and Sustainable Energy (DIIES), “Mediterranea” University, Reggio Calabria 89122, Italy
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Sensors 2016, 16(1), 67;
Received: 8 November 2015 / Revised: 20 December 2015 / Accepted: 25 December 2015 / Published: 6 January 2016
(This article belongs to the Section Physical Sensors)
PDF [1157 KB, uploaded 7 January 2016]


Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. View Full-Text
Keywords: p-i-n diode; temperature sensors; amorphous silicon; photonic integrated circuit p-i-n diode; temperature sensors; amorphous silicon; photonic integrated circuit

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Rao, S.; Pangallo, G.; Della Corte, F.G. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics. Sensors 2016, 16, 67.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top