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Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Department of Information Engineering Infrastructures and Sustainable Energy (DIIES), “Mediterranea” University, Reggio Calabria 89122, Italy
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Author to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Sensors 2016, 16(1), 67; https://doi.org/10.3390/s16010067
Received: 8 November 2015 / Revised: 20 December 2015 / Accepted: 25 December 2015 / Published: 6 January 2016
(This article belongs to the Section Physical Sensors)
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. View Full-Text
Keywords: p-i-n diode; temperature sensors; amorphous silicon; photonic integrated circuit p-i-n diode; temperature sensors; amorphous silicon; photonic integrated circuit
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MDPI and ACS Style

Rao, S.; Pangallo, G.; Della Corte, F.G. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics. Sensors 2016, 16, 67.

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