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Open AccessArticle

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

1
Department of Electrical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin, Gyeonggi 17058, Korea
2
Korea Electrotechnology Research Institute, Changwon, Gyeongnam 51543, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(2), 332; https://doi.org/10.3390/electronics9020332
Received: 20 December 2019 / Revised: 7 February 2020 / Accepted: 13 February 2020 / Published: 15 February 2020
High-power switching applications, such as thyristor valves in a high-voltage direct current converter, can use 4H-SiC. The numerical simulation of the 4H-SiC devices requires specialized models and parameters. Here, we present a numerical simulation of the 4H-SiC thyristor on an N+ substrate gate current during the turn-on process. The base-emitter current of the PNP bipolar junction transistor (BJT) flow by adjusting the gate potential. This current eventually activated a regenerative action of the thyristor. The increase of the gate current from P+ anode to N+ gate also decreased the snapback voltage and forward voltage drop (Vf). When the doping concentration of the P-drift region increased, Vf decreased due to the reduced resistance of a low P-drift doping. An increase in the P buffer doping concentration increased Vf owing to enhanced recombination at the base of the NPN BJT. There is a tradeoff between the breakdown voltage and forward characteristics. The breakdown voltage is increased with a decrease in concentration, and an increase in drift layer thickness occurs due to the extended depletion region and reduced peak electric field. View Full-Text
Keywords: SiC; thyristor; power device; gate current; snapback; forward voltage drop SiC; thyristor; power device; gate current; snapback; forward voltage drop
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Lee, H.; Seok, O.; Kim, T.; Ha, M.-W. Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications. Electronics 2020, 9, 332.

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