HfO2 and V2O5 as multi-layer thin films are discussed for their potential use as transparent heat mirrors. Multi-layered HfO2/V2O5/HfO2 thin films with a thickness of 100/60/100 nm were prepared via e-beam evaporation on a soda–lime glass subst...
HfO2 thin films are extensively applied in optical coatings and microelectronic devices. However, film defects, which are vital to the performance of the thin films, are still under intense investigation. In this work, the absorption, photoluminescen...
The optical absorption mechanism and the preparation technology for achieving low absorption of HfO2 thin films at 1064 nm were systematically investigated. Through molecular dynamics simulations and electron density of states calculations, it was de...
Y-doped HfO2 ferroelectric thin films were fabricated via the sol–gel chemical solution deposition method. The effects of Y doping concentration, film thickness, and annealing temperature on the structure, morphology, and electrical properties...
HfO2 thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental...
In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT). All the electrical properties of In2...
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in...
In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s gro...
The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-g...
Various properties of HfO2, such as hardness, corrosion, or electrical resistance, depend on the method and the conditions of deposition. In this work, a thorough comparison of scarcely investigated mechanical properties of HfO2 thin films deposited...
HfO2 thin films were deposited on BK-7 glass substrates using an electron beam evaporation deposition (EBD) technique and then post-treated with argon and oxygen ions at an ion energy ranging from 800 to 1200 eV. The optical properties, laser damage...
Oxygen defects in Hafnium Oxide (HfO2)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO2 t...
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various...
We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits...
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor...
Ferroelectricity in hafnium oxide (HfO2)-based thin films has emerged as a scalable pathway toward CMOS-compatible non-volatile memories and logic devices. This study examines how dopant chemistry and film thickness influence the stabilization of the...
Many factors have been confirmed to affect ferroelectric phase formation in HfO2-based thin films but there was still a lack of general view on describing them. This paper discusses the intrinsic parameters to stabilize the ferroelectric phase of HfO...
HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth p...
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited...
The aim of this work is to determine the influence of medium frequency magnetron sputtering powers on the various properties of hafnium dioxide (HfO2) thin films. Microstructure observations show that an increase in the sputtering power has a signifi...
In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs,...
Recently, certain challenges have persisted in PH sensor applications, especially when employing hafnium oxide (HfO2) thin films as sensing layers, where issues related to sensitivity, hysteresis, and long-term stability hamper performance. Microwave...
Hafnium oxide thin films have been extensively investigated for high-speed and low-power memory applications. Herein, we investigated the influence of oxygen vacancies and external stress on the ferroelectric characteristics of Al-doped HfO2 (HfAlO)....
We report the fabrication of bottom gate a-IGZO TFTs based on HfO2 stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varie...
In order to eliminate the influence of the high-order magnetic dipole modes in the short-wave range of the high-refractive-index dielectric grating, we propose a thin film filter to cut off the “useless” short-wave. In this way, the high-...
We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO2 insulator demonstrated a slightly higher breakdown voltage, w...
With the continuous advancement of display technology and advanced integrated circuits, oxide thin-film transistors (TFTs) have become core devices due to their high mobility, low leakage current and excellent large-area uniformity. To achieve low po...
Indium hafnium oxide thin-film transistors (TFTs) were prepared by the sol-gel method, and their crystal structures, surface morphologies, chemical compositions, optical and electrical properties were systematically investigated using X-ray diffracti...
In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliabili...
Multilayering of optical thin films is widely used for a range of purposes in photonic technology, but the development of nanofiber structures that can outperform thin films and nanoparticles in optical applications cannot simply be disregarded. Hybr...
We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO2 thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properti...
A metal–insulator–metal structure resistive switching device based on H0.5Z0.5O2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable...
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potenti...
The development of sensitive, low–cost, and visually readable dosimeters for low gamma–ray exposures is important for occupational and environmental radiation monitoring and for other low–dose applications. This work investigates a...
The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory...
At present, ion doping is a popular method typically used to regulate the ferroelectric properties of Hf0.5Zr0.5O2 films. In this work, Ce (cerium)–doped Hf0.5Zr0.5O2 (Ce: HZO) films on Pt/TiN/SiO2/Si substrates were prepared by the chemical so...
Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fix...
In the frame of the nanoarchitectonic concept, the objective of this study was to develop simple and easy methods to ensure the preparation of polymorphic HfO2 thin film materials (<200 nm) having the best balance of patterning potential, reproduc...
Oxygen vacancies play a crucial role in stabilizing the ferroelectric phase in hafnium (Hf) oxide-based thin films and in shaping the evolution of their ferroelectric properties. In this study, we directly manipulated the oxygen vacancy concentration...
A high-temperature-resistant and high-performance hafnium oxide (HfO2) coating for aerospace engines was developed. HfO2 thin film coatings were prepared by chemical vapor deposition (CVD) at 1200, 1250, 1300, and 1350 °C, respectively. The cryst...
Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystal...
Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excel...
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This stu...
With the improvement of integration levels to several nanometers or less, semiconductor leakage current has become an important issue, and oxide-based semiconductors, which have replaced Si-based channel layer semiconductors, have attracted attention...
In this paper the influence of material composition on the structural, surface and optical properties of HfO2-TiO2 mixed oxide coatings was investigated and discussed. Five sets of thin films were deposited using reactive magnetron sputtering: HfO2,...
Hf1−xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at l...
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance. In this study, we investigated the interface characteristics of HfO2 and SiO2/HfO2 gate di...
Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a...
The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have...
The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare t...
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