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Article

Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity

by
Tianning Cui
1,2,
Liping Zhu
3,
Danyang Chen
1,2,
Yuyan Fan
1,2,
Jingquan Liu
1 and
Xiuyan Li
1,*
1
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
2
Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China
3
Department of Physics, Fudan University, Shanghai 200433, China
*
Author to whom correspondence should be addressed.
Electronics 2022, 11(15), 2369; https://doi.org/10.3390/electronics11152369
Submission received: 9 June 2022 / Revised: 13 July 2022 / Accepted: 21 July 2022 / Published: 28 July 2022
(This article belongs to the Special Issue Advanced CMOS Devices and Applications)
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Abstract

Many factors have been confirmed to affect ferroelectric phase formation in HfO2-based thin films but there was still a lack of general view on describing them. This paper discusses the intrinsic parameters to stabilize the ferroelectric phase of HfO2 thin films to approach this general view by investigating the separate effects of dopant, oxygen vacancy (VO), and specific surface area on the crystal phase of the films. It is found that in addition to extensively studied dopants, the ferroelectric orthorhombic phase can also be formed in pure HfO2 films by only introducing sufficient VO independently, and it is also formable by only increasing the specific surface area. By analyzing the common physics behind these factors, it is found that orthorhombic phase formation is universally related to strain in all the above cases with a given temperature. To get a general view, a physical model is established to describe how the strain influences ferroelectric phase formation during the fabrication of HfO2-based films based on thermodynamic and kinetics analysis.
Keywords: ferroelectricity engineering; HfO2; impactor factors; general parameters ferroelectricity engineering; HfO2; impactor factors; general parameters

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MDPI and ACS Style

Cui, T.; Zhu, L.; Chen, D.; Fan, Y.; Liu, J.; Li, X. Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity. Electronics 2022, 11, 2369. https://doi.org/10.3390/electronics11152369

AMA Style

Cui T, Zhu L, Chen D, Fan Y, Liu J, Li X. Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity. Electronics. 2022; 11(15):2369. https://doi.org/10.3390/electronics11152369

Chicago/Turabian Style

Cui, Tianning, Liping Zhu, Danyang Chen, Yuyan Fan, Jingquan Liu, and Xiuyan Li. 2022. "Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity" Electronics 11, no. 15: 2369. https://doi.org/10.3390/electronics11152369

APA Style

Cui, T., Zhu, L., Chen, D., Fan, Y., Liu, J., & Li, X. (2022). Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity. Electronics, 11(15), 2369. https://doi.org/10.3390/electronics11152369

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