HfO2-Based Ferroelectric Thin Films and Devices
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 25 February 2027 | Viewed by 4243
Editors
Interests: hafnium-oxide-based ferroelectrics; polar topological domain in ferroelectrics; electric control of magnetization swtiching in multiferroics
Special Issues, Collections and Topics in MDPI journals
Interests: ferroelectric; ferromagnetic; multiferroic; complex oxides; memory; neuromorphic computing
Special Issue Information
Dear Colleagues,
Ferroelectric nanoscale materials have attracted substantial interest not only because of fundamental physical phenomena that are distinct from the bulk, including exotic topological domain configurations such as flux-closure domains, polar vortex, and polar skyrmions, but also due to their potential applications in reconfigurable ferroelectric memory devices. Notably, apart from the conventional perovskite-based ferroelectrics (e.g., BaTiO3, (Pb,Zr)TiO3), fluorite-structured HfO2-based ferroelectrics are becoming a hot research topic due to their excellent compatibility with complementary metal–oxide–semiconductor technology (CMOS), robust ferroelectricity at the nanoscale, and scalability for highly dense information storage, which are promising for next-generation ferroelectric devices, such as ferroelectric random-access memories (FeRAMs), ferroelectric field-effect transistors (FeFETs), neuromorphic devices, and so on.
The present Special Issue of Nanomaterials aims to present the current state-of-the-art in the use of HfO2-based ferroelectric thin films and devices, a field that has blossomed since 2011 with seminal discoveries of the first report of their ferroelectricity and recent advances in theoretical and experimental research, including the mechanism of stabilization of the metastable ferroelectric phase, wake-up effect, and ferroelectric fatigue, domains and domain dynamics, high-speed, high-reliability, high-density, and low-power ferroelectric memory devices, and so on. This Special Issue invites contributions from leading groups in the field, with the aim of providing a balanced view of the current state-of-the-art in this discipline.
The scope of this Special Issue is focused on ferroelectric nanoscale materials. Areas to be covered from the point of view of theoretical or experimental research may include, but are not limited to, the following:
(1) Fabrication and characterization of HfO2-based ferroelectric nanoscale materials;
(2) Novel topological domains in perovskite-based ferroelectric nanoscale materials;
(3) Stabilization of metastable HfO2-based ferroelectric phase;
(4) Mechanism of wake-up effect and fatigue (or endurance) in HfO2-based thin films;
(5) Domain structures and domain dynamics in HfO2-based thin films;
(6) Prototypical ferroelectric memory and novel logic devices.
Dr. Ren-Ci Peng
Prof. Dr. Shengchun Shen
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- ferroelectric thin films
- novel topological domains
- HfO2-based ferroelectric
- domain and domain dynamics
- wake-up effect and fatigue
- endurance
- metastable ferroelectric phase
- ferroelectric memory and logic devices
Benefits of Publishing in a Special Issue
- Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
- Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
- Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
- External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
- Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.
Further information on MDPI's Special Issue policies can be found here.
