Special Issue "Applications of Thin Films in Microelectronics"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics and Optoelectronics".

Deadline for manuscript submissions: 15 January 2021.

Special Issue Editor

Dr. Hyuk-Jun (Jaden) Kwon
Website
Guest Editor
Department of Information & Communication Engineering (ICE), DGIST, Daegu 42988, South Korea
Interests: flexible and wearable electronics and applications; Site-selective laser processing (annealing, sintering, direct laser writing, plasmonic welding, interference, etc.); micro/nanoscale thermal/heat transfer analysis; polymer like hyperelastic non-linear behavior analysis (e.g. stress, strain) for stretchable and flexible structure; electronic and optoelectronic device applications of 2D materials; device physics for semiconductor devices based on thin-film transistors platform; solution processed low-cost printing technologies and development (e.g. screen, inkjet, roll-to-roll, gravure, etc.); 3D hierarchical mechanical metamaterial structure and system

Special Issue Information

Dear Colleagues,

Thin films formed by lots of different approaches are being used in various applications for microelectronics (e.g., transistors, sensors, batteries, energy devices, actuators, coatings) due to their versatility. Furthermore, the electronics industry has become the greatest beneficiary of thin film technology, which contributes to the development of microelectronics by reducing the sizes of semiconductor devices. These thin film devices are more essentially designed, with outstanding mechanical deformability, sensitive-to-multifunctional responses, and intelligent control capabilities. As thin films technology is a multidisciplinary field, thin films studies have directly or indirectly caused the advancement of many new areas of research and will continue to play increasingly important roles in the study of a variety of problems of basic and technological importance. Therefore, by interacting with diverse perspectives, knowledge of the nature, functions, and new properties of thin films can be used for the development of new technologies for future applications in microelectronics.

The main aim of this Special Issue is to seek high-quality submissions that highlight emerging applications, materials synthesis, and the fabrication process, which address recent breakthroughs in the microelectronic system. The topics of interest include but are not limited to:

  • Searching and investigating various types of applications of thin films in electronics;
  • Advanced fabrication processes and characterizations;
  • Research into new synthesis methods;
  • Analysis of film behaviors;
  • Robust and reliable novel geometrical designs in microelectronics.

Dr. Hyuk-Jun (Jaden) Kwon
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Applications of thin films in electronics
  • Low dimension materials
  • Advanced fabrication processes
  • Analysis of film behaviors (Physical and chemical)
  • Robust and reliable structural design
  • Characterizations of thin films
  • New synthesis approach

Published Papers (5 papers)

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Research

Open AccessArticle
Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing
Electronics 2020, 9(7), 1068; https://doi.org/10.3390/electronics9071068 - 30 Jun 2020
Abstract
The effects of post-deposition annealing (PDA) on the formation of polarization-charge inversion at ultrathin Al2O3/Ga-polar GaN interfaces are assessed by the analysis of energy band bending and measurement of electrical conduction. The PDA-induced positive interface charges form downward energy [...] Read more.
The effects of post-deposition annealing (PDA) on the formation of polarization-charge inversion at ultrathin Al2O3/Ga-polar GaN interfaces are assessed by the analysis of energy band bending and measurement of electrical conduction. The PDA-induced positive interface charges form downward energy band bending at the Al2O3/GaN interfaces with polarization-charge inversion, which is analyzed using X-ray photoelectron spectroscopy. Net charge and interface charge densities at the Al2O3/GaN interfaces are estimated after PDA at 500 °C, 700 °C, and 900 °C. The PDA temperatures affect the formation of charge densities. That is, the charge density increases up to 700 °C and then decreases at 900 °C. Electrical characteristics of GaN Schottky diodes with ultrathin Al2O3 layers exhibit the passivation ability of the Al2O3 surface layer and the effects of polarization-charge inversion through PDA. This result can be applied to improvement in GaN-based electronic devices where surface states and process temperature work important role in device performance. Full article
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
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Open AccessArticle
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor
Electronics 2020, 9(3), 523; https://doi.org/10.3390/electronics9030523 - 22 Mar 2020
Abstract
Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved [...] Read more.
Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff ratio of 4.23 cm2/Vs, 1.37 V/decade, and ~1 × 107, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO2-based thin-film devices. Full article
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
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Open AccessFeature PaperArticle
Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors
Electronics 2020, 9(2), 254; https://doi.org/10.3390/electronics9020254 - 03 Feb 2020
Abstract
Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties [...] Read more.
Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift. Full article
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
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Open AccessArticle
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
Electronics 2019, 8(9), 955; https://doi.org/10.3390/electronics8090955 - 29 Aug 2019
Cited by 2
Abstract
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size [...] Read more.
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively. Full article
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
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Open AccessArticle
Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM
Electronics 2019, 8(9), 947; https://doi.org/10.3390/electronics8090947 - 28 Aug 2019
Cited by 1
Abstract
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of [...] Read more.
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation. Full article
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
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