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Crystals 2018, 8(6), 248; https://doi.org/10.3390/cryst8060248

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

1
Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China
2
School of Physical Science & Technology, Guangxi University, Nanning 530004, China
3
Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106-17, Taiwan
4
State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
*
Authors to whom correspondence should be addressed.
Received: 23 April 2018 / Revised: 31 May 2018 / Accepted: 5 June 2018 / Published: 12 June 2018
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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Abstract

Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO2 films. View Full-Text
Keywords: hafnium dioxide (HfO2); X-ray photoelectron spectroscopy (XPS); Rutherford backscattering spectrometry (RBS); grazing incidence X-ray diffraction (GIXRD); variable angle spectroscopic ellipsometry (VASE) hafnium dioxide (HfO2); X-ray photoelectron spectroscopy (XPS); Rutherford backscattering spectrometry (RBS); grazing incidence X-ray diffraction (GIXRD); variable angle spectroscopic ellipsometry (VASE)
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Luo, X.; Li, Y.; Yang, H.; Liang, Y.; He, K.; Sun, W.; Lin, H.-H.; Yao, S.; Lu, X.; Wan, L.; Feng, Z. Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry. Crystals 2018, 8, 248.

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