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Recent Developments in Thin Films for Technological Applications
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Recent Developments in Thin Films for Technological Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: 28 February 2026 | Viewed by 6174

Special Issue Editors

Dr. Alessandro D'Elia

E-Mail Website
Guest Editor
Laboratori Nazionali di Frascati INFN, Frascati, Italy
Interests: quantum devices, qubit; quantum materials; van der Waals materials; transition metal dichalcogenide; thin strained films; nanostructured materials coating; transition metal oxide; strongly correlated materials; metal insulator transition; VO2; surface characterization; work function
Dr. Salvatore Macis

E-Mail Website
Guest Editor
Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
Interests: spectroscopy; metamaterials; plasmonic; phononic; topological materials; exotic excitations
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We invite you to submit your manuscripts to the Special Issue "Recent Developments in Thin Films for Technological Applications". This Special Issue aims to explore new research works in the field of thin films, with a particular emphasis on transition metal oxides, transition metal dichalcogenides (TMDs), and coating technologies.

Transition metal oxides have garnered substantial attention due to their versatile electronic, optical, and magnetic properties. These materials are pivotal in the development of next-generation electronic devices, sensors, and catalysts. Their unique ability to exhibit various oxidation states and structural phases makes them suitable for applications in energy storage, smart windows, and memristors.

Transition metal dichalcogenides (TMDs) represent another exciting class of materials, characterized by their layered structures and tunable band gaps. TMD thin films exhibit remarkable properties such as high carrier mobility, strong spin–orbit coupling, and flexibility, making them ideal candidates for applications in flexible electronics, valleytronics, and next-generation transistors.

By gathering the latest research and insights, this Special Issue aims to provide a comprehensive overview of the recent developments in thin films and their transformative potential for technological applications.

Topics of interest include, but are not limited to, the following:

  • Thin-film growths and characterization;
  • Thin-film structure–property relations;
  • Functional properties of thin films and coating materials;
  • Transition metal oxides heterointerfaces;
  • Van der Waals materials characterizations and applications;
  • Plasmonic and phononic materials;
  • Superconducting materials and coatings.

Dr. Alessandro D'Elia
Dr. Salvatore Macis
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • transition metal oxides
  • transition metal dicalcogenides
  • thin-film
  • growths and characterization

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Published Papers (5 papers)

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Research

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24 pages, 8476 KB  
Article
Ferroelectric Phase Stabilization and Charge-Transport Mechanisms in Doped HfO2 Thin Films: Influence of Dopant Chemistry and Thickness
by Florin Năstase, Nicoleta Vasile, Silviu Vulpe, Cosmin Romanițan, Raluca Gavrilă, Oana Brîncoveanu, Lucia Monica Veca and Miron Adrian Dinescu
Coatings 2025, 15(12), 1396; https://doi.org/10.3390/coatings15121396 - 29 Nov 2025
Viewed by 896
Abstract
Ferroelectricity in hafnium oxide (HfO2)-based thin films has emerged as a scalable pathway toward CMOS-compatible non-volatile memories and logic devices. This study examines how dopant chemistry and film thickness influence the stabilization of the ferroelectric phase in ALD-grown HfO2 thin [...] Read more.
Ferroelectricity in hafnium oxide (HfO2)-based thin films has emerged as a scalable pathway toward CMOS-compatible non-volatile memories and logic devices. This study examines how dopant chemistry and film thickness influence the stabilization of the ferroelectric phase in ALD-grown HfO2 thin films doped with Zr, Al, and Y. Structural, morphological, and electrical characterizations were carried out using AFM, GIXRD, P–E, in-plane I/W–E, and C–V measurements on films with thicknesses of 7 nm and 100 nm. AFM revealed atomically smooth and dense surfaces (R_q < 0.5 nm), while GIXRD confirmed the stabilization of the orthorhombic Pca21 phase in doped 7 nm films and its relaxation toward the monoclinic phase at 100 nm. The 7 nm HfZrO and HfYO films exhibited robust ferroelectric hysteresis with remanent polarization values up to 60 μC·cm−2, whereas HfAlO showed a narrower but still distinct switching response. In-plane I/W–E characteristics indicated a combination of Poole–Frenkel and injection-limited conduction, consistent with defect-assisted polarization reversal and asymmetric contact barriers. At 100 nm, all films showed reduced polarization and partially dielectric behavior, as corroborated by the C–V data. These results demonstrate that nanoscale confinement, dopant-induced strain, and oxygen vacancy related defect chemistry collectively stabilize the orthorhombic ferroelectric phase, with Zr doping providing the most favorable balance between polarization strength and leakage control. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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14 pages, 4067 KB  
Article
Thin Films of PNDI(2HD)2T and PCPDTBT Polymers Deposited Using the Spin Coater Technique for Use in Solar Cells
by Michał Sładek, Patryk Radek, Magdalena Monika Szindler and Marek Szindler
Coatings 2025, 15(5), 603; https://doi.org/10.3390/coatings15050603 - 18 May 2025
Cited by 1 | Viewed by 973
Abstract
Conductive polymers play a crucial role in the advancement of modern technologies, particularly in the field of organic photovoltaics (OPVs). Due to advantages such as flexibility, low specific weight, ease of processing, and low production costs, polymeric materials present an attractive alternative to [...] Read more.
Conductive polymers play a crucial role in the advancement of modern technologies, particularly in the field of organic photovoltaics (OPVs). Due to advantages such as flexibility, low specific weight, ease of processing, and low production costs, polymeric materials present an attractive alternative to traditional photovoltaic materials. This study investigates the properties of a polymer blend composed of PCPDTBT (donor) and PNDI(2HD)2T (acceptor), used as the active layer in bulk heterojunction (BHJ) solar cells. The motivation behind this research was the search for a novel n-type polymer material with potentially better properties than the commonly used P(NDI2OD-T2). Comprehensive characterization of thin films made from the individual polymers and their blend was conducted using Fourier Transform Infrared Spectroscopy (FTIR), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Ultraviolet-Visible Spectroscopy (UV-Vis), four-point probe conductivity measurements, and photovoltaic testing. The prepared films were continuous, uniform, and exhibited low surface roughness (Ra < 2.5 nm). Spectroscopic analysis showed that the blend absorbs light in a broad range of the spectrum, with slight bathochromic shifts compared to individual polymers. Electrical measurements indicated that the blend’s conductivity (9.1 µS/cm) was lower than that of pure PCPDTBT but higher than that of PNDI(2HD)2T, with an optical band gap of 1.34 eV. Photovoltaic devices fabricated using the blend demonstrated an average power conversion efficiency (PCE) of 6.45%, with a short-circuit current of 14.37 mA/cm2 and an open-circuit voltage of 0.89 V. These results confirm the feasibility of using PCPDTBT:PNDI(2HD)2T blends as active layers in BHJ solar cells and provide a promising direction for further optimization in terms of polymer ratio and processing conditions. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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Review

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32 pages, 1577 KB  
Review
Research Progress on Transparent Conductive Properties of SnO2 Thin Films
by Xuezhi Li, Fuyueyang Tan, Chi Zhang, Jinhui Zhou, Zhengjie Guo, Yikun Yang, Yixian Xie, Xi Cao, Yuying Feng, Chenyao Huang, Zaijin Li, Yi Qu and Lin Li
Coatings 2026, 16(1), 23; https://doi.org/10.3390/coatings16010023 - 24 Dec 2025
Viewed by 749
Abstract
As a core candidate material for indium-free transparent conductive oxides, tin dioxide (SnO2) thin films are gradually replacing indium tin oxide (ITO) and becoming a research focus in the field of optoelectronic devices, thanks to their excellent physicochemical stability, wide bandgap [...] Read more.
As a core candidate material for indium-free transparent conductive oxides, tin dioxide (SnO2) thin films are gradually replacing indium tin oxide (ITO) and becoming a research focus in the field of optoelectronic devices, thanks to their excellent physicochemical stability, wide bandgap characteristics, and abundant tin resource reserves. This review focuses on SnO2 thin films. Firstly, it elaborates on the tetragonal rutile crystal structure characteristics of SnO2 and the transparent conductive mechanism based on oxygen vacancies and doping elements to regulate free electron concentration, while clarifying the key parameters for evaluating their transparent conductive properties. Subsequently, it systematically summarizes the research progress in preparing SnO2 transparent conductive thin films via physical methods and chemical methods in recent years. It compares the microstructure and transparent conductive properties of thin films prepared by different methods, and analyzes the regulatory laws of preparation processes, doping types, and film thickness on their optoelectronic properties. Furthermore, this work supplements the current application status of SnO2 thin films in devices. Meanwhile, the core performance differences between indium-free tin-based thin film devices and ITO-based devices are compared. Finally, we have summarized the advantages and challenges of physical and chemical methods in the preparation of SnO2 thin films. It also forecasts the application potential of interdisciplinary integration of physical–chemical methods and the development of new doping systems in the preparation of high-performance SnO2 transparent conductive thin films. This review aims to provide theoretical guidance and technical references for the selection and process optimization of SnO2 transparent conductive thin films in fields such as photovoltaic devices and flexible optoelectronic equipment. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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37 pages, 2700 KB  
Review
Research Progress on Electrochromic Properties of WO3 Thin Films
by Fuyueyang Tan, Jinhui Zhou, Zhengjie Guo, Chi Zhang, Shaoyi Yu, Yikun Yang, Yixian Xie, Xi Cao, Xinyi Wu, Xiaofei Gao, Zaijin Li, Yi Qu and Lin Li
Coatings 2025, 15(11), 1310; https://doi.org/10.3390/coatings15111310 - 10 Nov 2025
Cited by 2 | Viewed by 1635
Abstract
With continuous breakthroughs in electrochromic technology, tungsten trioxide (WO3) thin films, as a core material in this field, are rapidly expanding their applications in smart windows, anti-glare automotive rearview mirrors, and adaptive optical lenses. Owing to its excellent electrochromic properties—including high [...] Read more.
With continuous breakthroughs in electrochromic technology, tungsten trioxide (WO3) thin films, as a core material in this field, are rapidly expanding their applications in smart windows, anti-glare automotive rearview mirrors, and adaptive optical lenses. Owing to its excellent electrochromic properties—including high optical modulation, short switching times, and high coloration efficiency—WO3 has become a research focus in the field of electrochromic devices. This review takes WO3 thin films as the research subject. It begins by introducing the crystal structure of WO3 and the ion/electron co-intercalation-based electrochromic mechanism and explains two key performance parameters for evaluating electrochromic properties: optical modulation amplitude and coloration efficiency. Subsequently, it provides a detailed review of recent advances in the preparation of WO3 thin films via physical methods (including sputtering deposition, evaporative deposition, and pulsed laser deposition) and chemical methods (including hydrothermal, sol–gel, and electrodeposition methods). A systematic comparison is made of the microstructure and electrochromic performance (optical modulation amplitude and coloration efficiency) of films prepared by different methods, and the interaction between WO3 film morphology and device structure is analyzed. Finally, the advantages and challenges of physical and chemical methods in tuning film properties are summarized, and the outlook of their application prospects in high-performance electrochromic devices is given. This review aims to provide guidance for the selection and process optimization of WO3 thin films with enhanced performance for applications such as smart windows, anti-glare rearview mirrors, and adaptive optical systems. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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30 pages, 3586 KB  
Review
Research Progress on Thermoelectric Properties of Doped SnSe Thin Films
by Zhengjie Guo, Chi Zhang, Jinhui Zhou, Fuyueyang Tan, Canyuan Yang, Shenglan Li, Yue Lou, Enning Zhu, Zaijin Li, Yi Qu and Lin Li
Coatings 2025, 15(9), 1041; https://doi.org/10.3390/coatings15091041 - 5 Sep 2025
Cited by 1 | Viewed by 1240
Abstract
With the continuous advancement of science and technology, SnSe thin films are widely used in various fields such as solar cells, energy harvesting, and flexible devices. The importance of SnSe thin films continues to be highlighted, from solar cells to flexible devices. With [...] Read more.
With the continuous advancement of science and technology, SnSe thin films are widely used in various fields such as solar cells, energy harvesting, and flexible devices. The importance of SnSe thin films continues to be highlighted, from solar cells to flexible devices. With the continuous improvement of performance requirements for SnSe thin films in different fields, research on the properties of SnSe thin films has gradually become a hot topic. As an environmentally friendly and green material, SnSe thin films are more in line with modern semiconductor technology compared to crystalline materials, and they have unique advantages in the construction and application of thermoelectric micro/nano devices. This article first analyzes the characteristics of SnSe materials and then compares and analyzes PVD technologies and CVD technologies on doped SnSe thin films. In particular, it summarizes the research progress of CVD technologies on doped SnSe thin films, such as vacuum evaporation, magnetron sputtering, and pulse laser deposition, and it summarizes the research progress of PVD technologies on doped SnSe thin films, such as dual-temperature-zone CVD, the solution process method, and electrochemical deposition technology. It analyzes the performance of doped SnSe thin films prepared by different techniques. Finally, the preparation technology for the optimal thermoelectric properties of doped SnSe thin films and the approaches for potential research direction of future researchers were discussed, in the context of providing better performance SnSe thin films for the fields of solar cells, energy harvesting, and flexible devices. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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