- Article
Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films
- Kristjan Kalam,
- Mark-Erik Aan,
- Joonas Merisalu,
- Markus Otsus,
- Peeter Ritslaid and
- Kaupo Kukli
Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a...