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Open AccessArticle

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
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Author to whom correspondence should be addressed.
Micromachines 2020, 11(5), 525; https://doi.org/10.3390/mi11050525
Received: 30 April 2020 / Revised: 13 May 2020 / Accepted: 20 May 2020 / Published: 21 May 2020
(This article belongs to the Special Issue Deformable Bioelectronics Based on Functional Micro/nanomaterials)
Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1, 3:2, and 3:3) were fabricated and studied. The threshold voltage of the devices was increased from 0.9 V to 3.2 V, as the relative contents of Al2O3 layer in the superlattice were increased. At the same time, it is demonstrated that the off-resistance values of the devices were enhanced from 2.6 109 to 6 1010 as the atomic layer deposition (ALD) cycle ratio of HfO2 to Al2O3 layer was adjusted from 3:1 to 3:3. However, the hold voltage and the on-current values were almost identical for the three devices. These results can be understood using the larger barrier height of Al2O3 layer than that of HfO2 layer.
Keywords: transparent device; indium tin oxide (ITO); threshold switching device; multilayer; non-volatile memory transparent device; indium tin oxide (ITO); threshold switching device; multilayer; non-volatile memory
MDPI and ACS Style

Choi, Y.; Shin, J.; Moon, S.; Shin, C. Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate. Micromachines 2020, 11, 525.

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