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Nanomaterials 2019, 9(3), 408; https://doi.org/10.3390/nano9030408

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

1
College of Electronic Science, National University of Defense Technology, Changsha 410073, China
2
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
*
Author to whom correspondence should be addressed.
Received: 11 January 2019 / Revised: 4 March 2019 / Accepted: 8 March 2019 / Published: 11 March 2019
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Abstract

Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>107) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO2 layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO2 due to the grain boundary quantity. View Full-Text
Keywords: chalcogenide; memristor; resistive random access memory; dual-layer; threshold switching selector chalcogenide; memristor; resistive random access memory; dual-layer; threshold switching selector
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Song, B.; Cao, R.; Xu, H.; Liu, S.; Liu, H.; Li, Q. A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation. Nanomaterials 2019, 9, 408.

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