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Article

Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device

Department of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
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Author to whom correspondence should be addressed.
Academic Editor: Michael Störmer
Metals 2021, 11(10), 1531; https://doi.org/10.3390/met11101531
Received: 29 August 2021 / Revised: 17 September 2021 / Accepted: 24 September 2021 / Published: 26 September 2021
(This article belongs to the Special Issue Metal Oxides Chracterazation for Emerging Memory Device Applications)
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs both with the compliance current and without the compliance current. The conduction mechanism of low-resistance state (LRS) and high-resistance state (HRS) are dominated by Ohmic conduction and Schottky emission, respectively. Finally, threshold switching and bipolar resistive switching are verified by pulse operation. View Full-Text
Keywords: memristor; threshold switching; resistive switching memory; metal oxides memristor; threshold switching; resistive switching memory; metal oxides
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MDPI and ACS Style

Ryu, H.; Park, B.; Kim, S. Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device. Metals 2021, 11, 1531. https://doi.org/10.3390/met11101531

AMA Style

Ryu H, Park B, Kim S. Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device. Metals. 2021; 11(10):1531. https://doi.org/10.3390/met11101531

Chicago/Turabian Style

Ryu, Hojeong, Beomjun Park, and Sungjun Kim. 2021. "Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device" Metals 11, no. 10: 1531. https://doi.org/10.3390/met11101531

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