AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500 °C. First, we found that the hydrogen sensing performance of a conventi...
The flyback converter with its active cell balancing topology for charging lithium-based batteries in Electrical Vehicles (EV) have been adopted recently into the industry. Electrical Vehicle battery charging requires high current operation in contin...
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent pr...
The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensivel...
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (VBR) characteristics using a TCAD si...
In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA...
In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) te...
GaN HEMTs based on polarization super junction (PSJ) technology offer significant improvements in efficiency and power density over conventional silicon (Si) devices due to their excellent material characteristics, which enable fast switching edges a...
This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes....
Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the...
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor...
We report the electrical characterization and field emission properties of MoS 2...
In this paper, a new application of an electro-active-polymer for a radio frequency (RF) switch is presented. We used an ionic polymer metallic composite (IPMC) switch to change the operating frequency of an inverted-F antenna. This switch is light i...
We investigated the electrical properties of a composite film loaded with semi-conductive poly(3-hexylthiophene) (P3HT) nanofibers dispersed in poly(styrene-b-butadiene-b-styrene) (SBS). This structure can be regarded as the hybrid of SBS matrix with...
This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a cal...
A normally-off β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The...
Today, wide bandgap (WBG) GaN semiconductors are considered the future, allowing the improvement of power transistors. The main advantage of GaN is the presence of two-dimensional electron gas (2Deg) typically used as a conduction layer in normally-o...
This literature-based review draws on studies of thirty-four fish species; most are from northern temperate regions. Fish have flexible and indeterminate growth, and often they do not reach their growth and size potential. They may become stunted wit...
The distribution of the product of two normally distributed random variables has been an open problem from the early years in the XXth century. First approaches tried to determinate the mathematical and statistical properties of the distribution of s...
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most...
In this survey, a short introduction of the recent discovery of log-normally-distributed market-technical trend data will be given. The results of the statistical evaluation of typical market-technical trend variables will be presented. It will be sh...
In this paper, a simple sub-loading yield surface model for both normally consolidated and over-consolidated clay is proposed with emphasis on the effect of the yield surface shape. Compared with the modified Cam-clay model, only one additional mater...
Accurate fluid management in microfluidic-based point-of-care testing (POCT) devices is critical. Fluids must be gated and directed in precise sequences to facilitate desired biochemical reactions and signal detection. Pneumatic valves are widely uti...
As most existing experimental studies on plate anchors were carried out in uniform clay, a centrifuge model study is presented in this paper to investigate the pull-out behaviour of plate anchors in normally consolidated clay, which is not uncommon i...
This paper focuses on the soft normally open point (SNOP) which has no transformers and connects to the 10 kV distribution network through the arc suppression coil grounding mode. A mathematical model containing positive-, negative-, and zero-sequenc...
Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previ...
Microscale elastomeric valves are an integral part of many lab-on-chip applications. Normally closed valves require lower actuation pressures to form tight seals, making them ideal for portable devices. However, fabrication of normally closed valves...
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG...
This study presents an enhanced analytical approach for one-dimensional consolidation settlement by introducing a revised AJOP (arc joint via optimum parameters) equation assuming creep and strain rate effects can be neglected for both normally and o...
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion imp...
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduc...
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simu...
In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-F...
Microfluidic systems for medical applications necessitate reliable, wide flow range, and low leakage microvalves for flow path control. High design complexity of microvalves increases the risk of possible malfunction. We present a normally open micro...
This paper focuses on the problem of high-performance streaming random number generation in the range of uniform and normal distributions in FPGAs. Our work is focused on lightweight implementation, suitable for a wide range of FPGAs. First, we revie...
The compression index (Cc) serves as a crucial parameter in predicting consolidation settlement in fine-grained soils, representing the slope of the void ratio logarithmic effective stress curve obtained from oedometer tests. However, traditional con...
The marine clays located in the Southeast area of China are characterized by their higher water content, higher compressibility and higher salinities. This soil is mainly composed of illite/montmorillonite interlayer minerals. Previous research has s...
Developments in the world of finance have led the authors to assess the adequacy of using the normal distribution assumptions alone in measuring risk. Cushioning against risk has always created a plethora of complexities and challenges; hence, this p...
In this paper, membrane deflection against fluid flow and opening membrane (threshold) pressure were studied using fluid-structure interaction (FSI) analysis, and compared with experimental data obtained by Jaemin et al. In the current analysis, two...
Changes in the activities of some metabolic factors have been suggested to increase the risk of conditions associated with the Developmental Origins of Health and Disease (DOHaD). We examined changes in oxytocin (OT), a metabolic factor, and OT recep...
Reservoir characteristics and the occurrence mechanism of shale gas outside of the Sichuan Basin are the research hotspots of normally pressured shales in China. Taking shales on the Anchang syncline from the periphery of the Sichuan Basin as an exam...
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate,...
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer...
We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the &b...
Background/Goals: The gut hormone peptide YY (PYY) secreted from intestinal L-cells has been implicated in the mechanisms of satiation via Y2-receptor (Y2R) signaling in the brain and periphery and is a major candidate for mediating the beneficial ef...
A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high V...
We present a disposable, normally closed, non-contact dispensing valve for the sub-µL range. The miniaturized solenoid valve (diameter: 8 mm, height: 27.25 mm) is compatible to standard Luer-Lock interfaces. A highly dynamic actuation principle enabl...
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench s...
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD)...
The degree of the over-consolidation ratio (OCR) of silty clay affects the soil’s mechanical properties and in situ test results. The present study utilized numerical analysis to investigate the behavior of cone penetration and pore pressure di...
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