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Article

Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors

1
Dept. of Electrical Engineering, Ta Hua Institute of Technology, Hsinchu, Taiwan
2
Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, HsinChu, Taiwan
3
Dept. of Mechanical Engineering, National Chiao-Tung University, Hsinchu, Taiwan
4
Taiwan Automotive Research Consortium, Taiwan
*
Author to whom correspondence should be addressed.
World Electr. Veh. J. 2012, 5(2), 567-573; https://doi.org/10.3390/wevj5020567
Published: 29 June 2012

Abstract

Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application.
Keywords: GaN HEMT; flyback converter; soft-switching GaN HEMT; flyback converter; soft-switching

Share and Cite

MDPI and ACS Style

Jeng, S.L.; Peng, M.T.; Hsu, C.Y.; Chieng, W.H.; Shu, J.P.H. Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors. World Electr. Veh. J. 2012, 5, 567-573. https://doi.org/10.3390/wevj5020567

AMA Style

Jeng SL, Peng MT, Hsu CY, Chieng WH, Shu JPH. Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors. World Electric Vehicle Journal. 2012; 5(2):567-573. https://doi.org/10.3390/wevj5020567

Chicago/Turabian Style

Jeng, S. L., M. T. Peng, C. Y. Hsu, W. H. Chieng, and Jet P.H. Shu. 2012. "Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors" World Electric Vehicle Journal 5, no. 2: 567-573. https://doi.org/10.3390/wevj5020567

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