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World Electric Vehicle Journal is published by MDPI from Volume 9 issue 1 (2018). Articles in this Issue were published by The World Electric Vehicle Association (WEVA) and its member the European Association for e-Mobility (AVERE), the Electric Drive Transportation Association (EDTA), and the Electric Vehicle Association of Asia Pacific (EVAAP). They are hosted by MDPI on as a courtesy and upon agreement with AVERE.
Open AccessArticle

Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors

Dept. of Electrical Engineering, Ta Hua Institute of Technology, Hsinchu, Taiwan
Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, HsinChu, Taiwan
Dept. of Mechanical Engineering, National Chiao-Tung University, Hsinchu, Taiwan
Taiwan Automotive Research Consortium, Taiwan
Author to whom correspondence should be addressed.
World Electr. Veh. J. 2012, 5(2), 567-573;
Published: 29 June 2012
PDF [393 KB, uploaded 17 May 2018]


Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application.
Keywords: GaN HEMT; flyback converter; soft-switching GaN HEMT; flyback converter; soft-switching
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Jeng, S.L.; Peng, M.T.; Hsu, C.Y.; Chieng, W.H.; Shu, J.P. Quasi-Resonant Flyback DC/DC Converter Using GaN Power Transistors. World Electr. Veh. J. 2012, 5, 567-573.

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