Next Article in Journal
Ultra-Fine Bubble Distributions in a Plant Factory Observed by Transmission Electron Microscope with a Freeze-Fracture Replica Technique
Next Article in Special Issue
A Perspective on the Application of Spatially Resolved ARPES for 2D Materials
Previous Article in Journal
Electrospun Zein Fibers Incorporating Poly(glycerol sebacate) for Soft Tissue Engineering
Previous Article in Special Issue
Recent Advances in Nanoporous Membranes for Water Purification
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Nanomaterials 2018, 8(3), 151; https://doi.org/10.3390/nano8030151

Transport and Field Emission Properties of MoS2 Bilayers

1
Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, Italy
2
CNR-SPIN Salerno, 84084 Fisciano, Italy
3
Department of Physical and Chemical Sciences, University of L’Aquila, and CNR-SPIN L’Aquila, 67100 L’Aquila, Italy
*
Author to whom correspondence should be addressed.
Received: 9 February 2018 / Revised: 1 March 2018 / Accepted: 6 March 2018 / Published: 8 March 2018
(This article belongs to the Special Issue Synthesis, Structure and Applications of 2D Nanomaterials)
  |  
PDF [2550 KB, uploaded 9 March 2018]
  |  

Abstract

We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on a SiO 2 / Si substrate. Current–voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS 2 and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~ 200   V / μ m is able to extract current from the flat part of MoS 2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler–Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process. View Full-Text
Keywords: Transition metal dichalcogenides; MoS2; field-effect transistor; field emission Transition metal dichalcogenides; MoS2; field-effect transistor; field emission
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top