627 Results Found

In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (R_ON) only reache...

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structur...

This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silv...

We have investigated the electrical properties and reliability of AlGaN/GaN high electron mobility transistors (HEMT) under high-temperature RF overdrive stress. The experimental results show that the drain current and transconductance of the device...

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mo...

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to en...

An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to t...

In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimiz...

Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN...

This study compared the effectiveness of gallium nitride (GaN) with a single carbon-doped (C-doped) buffer layer and a composite carbon/iron-doped (C/Fe-doped) buffer layer within an AlGaN/GaN high-electron-mobility transistor (HEMT). In traditional...

A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al₂O₃/ZrO₂ stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency perfor...

In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT devic...

We present a method for real-time terahertz imaging that employs a hydrogen cyanide (HCN) laser as a terahertz source at 0.89 THz and an AlGaN/GaN high-electron-mobility transistor (HEMT) terahertz detector as a camera. We developed an HCN laser and...

This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage. Prior to the analysis of slant...

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimen...

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobilit...

The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences...

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with...

Diamond is an attractive substrate candidate for GaN high-electron-mobility transistors (HEMT) to enhance heat dissipation due to its exceptional thermal conductivity. However, the thermal boundary resistance (TBR) at the GaN–diamond interface...

High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractive choice of...

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections....

The breakdown characteristics are very important for GaN high-electron-mobility transistors (HEMTs), which affect the application voltage, power density, efficiency, etc. In order to further enhance the breakdown voltage of the device, it is necessar...

Nitrides are the leading semiconductor material used for the fabrication of high electron mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their high mechanical stiffness, expand their versatile applications in...

GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most...

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation la...

As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-po...

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown volta...

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN...

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the d...

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the...

Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMT...

In this study, we investigated the impact of intrinsic output conductance (g_oi) on the short-circuit current-gain cut-off frequency (f_T) in In_xGa_1-xAs/In_0.52Al_0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to e...

This paper presents a novel approach to the efficient extraction of parasitic resistances in high electron mobility transistors (HEMTs). The study reveals that the gate resistance value can be accurately determined under specific forward gate bias co...

The photoelectrochemical oxidation method was utilized to directly grow a gate oxide layer and simultaneously create gate-recessed regions for fabricating GaN-based depletion-mode metal-oxide-semiconductor high-electron mobility transistors (D-mode M...

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material...

This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by employing various passivation materials with different dielectric constants and passivation structures. To ensure the simulation reliab...

This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO₂ as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from...

In this work, Al_0.83In_0.17N/GaN/Al_0.18Ga_0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic ch...

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effec...

In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the...

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor...

Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the...

Substrate voltage (V_SUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be...

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sens...

The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate co...

In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and...

The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mob...

In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requi...

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In_0.17Al_0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The result...

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-typ...