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Appl. Sci. 2018, 8(6), 974; https://doi.org/10.3390/app8060974

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

1
Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
2
Electronics and Telecommunications Research Institute, Daejeon 34129, Korea
*
Author to whom correspondence should be addressed.
Received: 2 May 2018 / Revised: 8 June 2018 / Accepted: 12 June 2018 / Published: 14 June 2018
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Abstract

In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and simulated direct current characteristics of the fabricated two-finger conventional T-shaped gate HEMTs. Then, the AlGaN/GaN HEMT with a drain-side field plate (FP) structure was suggested to enhance the breakdown voltage characteristics. The maximum breakdown voltage recorded with a 0.8 μm stretched FP structure was 669 V. Finally, the IFP structure was interfaced with the gate head of the device to compensate the radio frequency characteristics, choosing the optimum length of the drain-side FP structure. Compared to the 0.8 μm stretched FP structure, the IFP structure showed improved frequency characteristics with minimal difference to the breakdown voltage. The frequency variation caused by changing the passivation thickness was also analyzed, and the optimum thickness was identified. Thus, IFP AlGaN/GaN HEMT is a promising candidate for high-power and high-frequency applications. View Full-Text
Keywords: Gallium Nitride; field plate; breakdown voltage; cut-off frequency; maximum frequency Gallium Nitride; field plate; breakdown voltage; cut-off frequency; maximum frequency
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Kwak, H.-T.; Chang, S.-B.; Kim, H.-J.; Jang, K.-W.; Yoon, H.S.; Lee, S.-H.; Lim, J.-W.; Kim, H.-S. Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure. Appl. Sci. 2018, 8, 974.

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