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Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

1
School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
2
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
3
China Academy of Space Technology, Beijing 100086, China
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Nanomaterials 2019, 9(7), 967; https://doi.org/10.3390/nano9070967
Received: 26 May 2019 / Revised: 25 June 2019 / Accepted: 27 June 2019 / Published: 1 July 2019
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Abstract

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 1014 cm−2, 1 × 1015 cm−2, to 1 × 1016 cm−2. Both the channel current and transconductance dramatically decreased as the irradiation fluence rose up to 1 × 1016 cm−2, whereas the specific channel on-resistance (Ron) exhibited an apparent increasing trend. These changes could be responsible for the reduction of mobility in the channel by the irradiation-induced trap charges. However, the kink effect became weaker with the increase of the electron fluence. Additionally, the current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) demonstrated a slightly downward trend as the irradiation fluence rose up to 1 × 1016 cm−2. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance (CGD) and the ratio of gate-drain capacitance and gate-source capacitance (CGD/CGS). Moreover, the increase of Ron may be another important factor for fmax reduction. View Full-Text
Keywords: InP-based high electron mobility transistor; electron irradiation; DC and RF characteristics; kink effect InP-based high electron mobility transistor; electron irradiation; DC and RF characteristics; kink effect
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Sun, S.; Ding, P.; Jin, Z.; Zhong, Y.; Li, Y.; Wei, Z. Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors. Nanomaterials 2019, 9, 967.

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