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Open AccessArticle

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

1
Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
2
Electronics and Telecommunications Research Institute, Daejeon 34129, Korea
3
Agency for Defense Development, Daejeon 34186, Korea
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(17), 3610; https://doi.org/10.3390/app9173610
Received: 17 July 2019 / Revised: 27 August 2019 / Accepted: 30 August 2019 / Published: 2 September 2019
(This article belongs to the Special Issue NANO KOREA 2019)
This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved. View Full-Text
Keywords: GaN; metal-insulator-semiconductor high electron mobility transistor; gate leakage current; two-dimensional electron gas; breakdown voltage GaN; metal-insulator-semiconductor high electron mobility transistor; gate leakage current; two-dimensional electron gas; breakdown voltage
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Hwang, I.-T.; Jang, K.-W.; Kim, H.-J.; Lee, S.-H.; Lim, J.-W.; Yang, J.-M.; Kwon, H.-S.; Kim, H.-S. Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect. Appl. Sci. 2019, 9, 3610.

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