Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Lin, Y. C.; Chen, S. H.; Lee, P. H.; Lai, K. H.; Huang, T. J.; Chang, Edward Y.; Hsu, Heng-Tung

doi:10.3390/mi11020222

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Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

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Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 300, Taiwan

Author to whom correspondence should be addressed.

Micromachines 2020, 11(2), 222; https://doi.org/10.3390/mi11020222

Received: 19 January 2020 / Revised: 14 February 2020 / Accepted: 19 February 2020 / Published: 21 February 2020

(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)

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Abstract

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies. View Full-Text

Keywords: high-electron-mobility transistors; copper metallization; millimeter wave

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Lin, Y.C.; Chen, S.H.; Lee, P.H.; Lai, K.H.; Huang, T.J.; Chang, E.Y.; Hsu, H.-T. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. Micromachines 2020, 11, 222. https://doi.org/10.3390/mi11020222

AMA Style

Lin YC, Chen SH, Lee PH, Lai KH, Huang TJ, Chang EY, Hsu H-T. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. Micromachines. 2020; 11(2):222. https://doi.org/10.3390/mi11020222

Chicago/Turabian Style

Lin, Y. C., S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang, and Heng-Tung Hsu. 2020. "Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications" Micromachines 11, no. 2: 222. https://doi.org/10.3390/mi11020222

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Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

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