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Article

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

1
School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China
2
Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
3
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(12), 848; https://doi.org/10.3390/mi10120848
Received: 3 November 2019 / Revised: 24 November 2019 / Accepted: 29 November 2019 / Published: 5 December 2019
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs. View Full-Text
Keywords: wide-bandgap semiconductor; high electron mobility transistors; vertical gate structure; normally-off operation; gallium nitride wide-bandgap semiconductor; high electron mobility transistors; vertical gate structure; normally-off operation; gallium nitride
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MDPI and ACS Style

Sun, Z.; Huang, H.; Sun, N.; Tao, P.; Zhao, C.; Liang, Y.C. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure. Micromachines 2019, 10, 848. https://doi.org/10.3390/mi10120848

AMA Style

Sun Z, Huang H, Sun N, Tao P, Zhao C, Liang YC. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure. Micromachines. 2019; 10(12):848. https://doi.org/10.3390/mi10120848

Chicago/Turabian Style

Sun, Zhonghao, Huolin Huang, Nan Sun, Pengcheng Tao, Cezhou Zhao, and Yung C. Liang. 2019. "A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure" Micromachines 10, no. 12: 848. https://doi.org/10.3390/mi10120848

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