Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

This paper is an extended version of our paper published in 7th IEEE International Symposium on Next-Generation Electronics (ISNE 2018), Taipei, Taiwan, 7–9 May 2018.

Sensors 2018, 18(9), 2795; https://doi.org/10.3390/s18092795

Received: 6 July 2018 / Revised: 6 August 2018 / Accepted: 22 August 2018 / Published: 24 August 2018

(This article belongs to the Special Issue Selected Papers from the 7th IEEE International Symposium on Next-Generation Electronics (ISNE 2018))

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Abstract

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors. View Full-Text

Keywords: InAlN; swing; wafer-scale; high-electron-mobility transistor (HEMT)

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MDPI and ACS Style

Chen, P.-G.; Chen, K.-T.; Tang, M.; Wang, Z.-Y.; Chou, Y.-C.; Lee, M.-H. Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors 2018, 18, 2795. https://doi.org/10.3390/s18092795

AMA Style

Chen P-G, Chen K-T, Tang M, Wang Z-Y, Chou Y-C, Lee M-H. Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors. 2018; 18(9):2795. https://doi.org/10.3390/s18092795

Chicago/Turabian Style

Chen, Pin-Guang, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, and Min-Hung Lee. 2018. "Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications" Sensors 18, no. 9: 2795. https://doi.org/10.3390/s18092795

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Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications^†

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Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

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Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications^†