Next Article in Journal
Internal Structure of Matrix-Type Multilayer Capsules Templated on Porous Vaterite CaCO3 Crystals as Probed by Staining with a Fluorescence Dye
Next Article in Special Issue
Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
Previous Article in Journal
Actuation of Flexible Membranes via Capillary Force: Single-Active-Surface Experiments
Previous Article in Special Issue
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
Article Menu
Issue 11 (November) cover image

Export Article

Open AccessFeature PaperArticle

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

1
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland
2
Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
3
TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
4
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
5
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
*
Authors to whom correspondence should be addressed.
Micromachines 2018, 9(11), 546; https://doi.org/10.3390/mi9110546
Received: 30 September 2018 / Revised: 20 October 2018 / Accepted: 21 October 2018 / Published: 25 October 2018
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
  |  
PDF [3494 KB, uploaded 25 October 2018]
  |  

Abstract

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance. View Full-Text
Keywords: high electron mobility transistors; high electron mobility transistor (HEMT); AlGaN/GaN; ohmic contact; regrown contact; ammonothermal GaN; power amplifier high electron mobility transistors; high electron mobility transistor (HEMT); AlGaN/GaN; ohmic contact; regrown contact; ammonothermal GaN; power amplifier
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed
Printed Edition Available!
A printed edition of this Special Issue is available here.

Share & Cite This Article

MDPI and ACS Style

Wojtasiak, W.; Góralczyk, M.; Gryglewski, D.; Zając, M.; Kucharski, R.; Prystawko, P.; Piotrowska, A.; Ekielski, M.; Kamińska, E.; Taube, A.; Wzorek, M. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts. Micromachines 2018, 9, 546.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top