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Open AccessArticle

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

1
School of Information Science and Technology, Nantong University, Nantong 226019, China
2
Department of Public Course Teaching, Shandong Polytechnic College, Jining 272067, China
3
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(8), 885; https://doi.org/10.3390/electronics8080885
Received: 18 July 2019 / Revised: 2 August 2019 / Accepted: 6 August 2019 / Published: 10 August 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
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Abstract

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier. View Full-Text
Keywords: In0.17Al0.83N/GaN HEMT; graded-polarization; back barrier; parasitic electron channel; electron confinement In0.17Al0.83N/GaN HEMT; graded-polarization; back barrier; parasitic electron channel; electron confinement
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Gu, Y.; Chang, D.; Sun, H.; Zhao, J.; Yang, G.; Dai, Z.; Ding, Y. Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer. Electronics 2019, 8, 885.

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