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Open AccessArticle

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

1
Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea
2
Electronics and Telecommunications Research Institute, Daejeon 34129, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(1), 53; https://doi.org/10.3390/mi11010053
Received: 28 November 2019 / Revised: 29 December 2019 / Accepted: 30 December 2019 / Published: 31 December 2019
(This article belongs to the Special Issue NANO KOREA 2019)
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT. View Full-Text
Keywords: GaN; high electron mobility transistor; self-heating effect; copper-filled structure; thermal conductivity GaN; high electron mobility transistor; self-heating effect; copper-filled structure; thermal conductivity
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MDPI and ACS Style

Jang, K.-W.; Hwang, I.-T.; Kim, H.-J.; Lee, S.-H.; Lim, J.-W.; Kim, H.-S. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Micromachines 2020, 11, 53.

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