- Article
Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors
- Yuyun Chen,
- Yi Shen,
- Yuanming Chen,
- Guodong Xu,
- Yudong Liu and
- Rui Huang
Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and th...